Infineon Technologies Austria Ag

Hui Kin Lit

Chii Shang Hong

Azlina Kassim

Yee Beng Daryl Yeow

Li Fong Chong

Ralf Otremba

Teck Sim Lee

Lee Shuang Wang

Ke Yan Tean

Jo Ean Joanna Chye

Wei-Shan Wang

A semiconductor device includes a semiconductor package, including a package body that includes an encapsulant portion and an isolation structure, a semiconductor die embedded within the package body, and a plurality of leads that protrude out from the encapsulant body, wherein the encapsulant portion and the isolation structure are each electrically insulating structures, wherein the isolation structure has a greater thermal conductivity than the encapsulant portion, and wherein the isolation structure is thermally coupled to the semiconductor die, and a releasable layer affixed to the semiconductor package, wherein a first outer face of the package body includes a first surface of the isolation structure, wherein the releasable layer at least partially covers the first surface of the isolation structure, and wherein the releasable layer is releasable from the semiconductor package.

Semiconductor package with releasable isolation layer protection

A semiconductor device includes a carrier, a first external contact, a second external contact, and a semiconductor die. The semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The semiconductor die is disposed with the first main face on the carrier. A clip connects the second contact pad to the second external contact. A first bond wire is connected between the third contact pad and the first external contact. The first bond wire is disposed at least partially under the clip.

Method for fabricating a semiconductor device by using different connection methods for the semiconductor die and the clip

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Melaka, Malaysia

Hui Kin Lit