Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Mk Electron Co., Ltd.

Korea Advanced Institute of Science and Technology

Korea Electronics Technology Institute

Korea Institute of Industrial Technology

Hoseo University Academic Cooperation Foundation

Hui Jung Kim

Jeong Tak Moon

Satoru Yamada

Min Hee Cho

Jun Soo Kim

SunYeop Kim

Jae Ho Hong

Hyunsuk Cho

Hyo Sub Kim

HongSung Song

Moon Young Jeong

Kiltae Kim

Young Woo Lee

Won Sok Lee

Ki Jae Hur

Nam Ho Jeon

Jae Yeol Son

Tae Yoon An

Myeong Dong Lee

Jin Hwan Chun

Jae Hong Lee

Seul Gee Lee

Chang Woo Lee

Seung Chan Heo

Sung Jae Hong

Jae Won Chang

Soonho Kwon

Ji Soo Jang

Kuk-Hui Chang

Seung-Dae Seok

Jae Bong Shin

Jae Hun Song

Jung Hwan Bang

Byung Joon Lee

Yong Ho Ko

Sang Yoon Kim

Min Su Park

Sang Hoon Kang

Ja Hyun Koo

Keun Soo Kim

Won Sik Hong

Eung Jae Kim

Santosh Kumar

Ho Gun Cha

Hyuck Mo Lee

Byung-Hyun Seo

ByungHyun Seo

Provided is a semiconductor package including a first bump pad on a first substrate, a second bump pad on a second substrate, a core material for reverse reflow between the first bump pad and the second bump pad, and a solder member forming a solder layer on the core material for reverse reflow. The solder member is in contact with the first bump pad and the second bump pad. Each of a first diameter of the first bump pad and a second diameter of the second bump pad is at least about 1.1 times greater than a third diameter of the core material for reverse reflow. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.

Semiconductor package using core material for reverse reflow

A semiconductor device includes a substrate, a first impurity implantation region and a second impurity implantation region on the substrate and spaced apart from each other, a storage node contact in contact with the first impurity implantation region, the storage node contact including an upper contact having a first width, and a lower contact having a second width that is greater than the first width at a lower portion of the upper contact, a bit line electrically connected to the second impurity implantation region and configured to cross the substrate, a bit line node contact between the bit line and the second impurity implantation region, and a spacer between the storage node contact and the bit line and between the storage node contact and the bit line node contact.

Method of manufacturing semiconductor device including spacer

Semiconductor device including spacer and method of manufacturing the same

A semiconductor device and a method for fabricating the same are provided. A semiconductor device having a substrate can include a lower semiconductor layer, an upper semiconductor layer on the lower semiconductor layer, and a buried insulating layer between the lower semiconductor layer and the upper semiconductor layer. A first trench can be in the upper semiconductor layer having a lowest surface above the buried insulating layer and a first conductive pattern recessed in the first trench. A second trench can be in the lower semiconductor layer, the buried insulating layer, and the upper semiconductor layer. A second conductive pattern can be in the second trench and a first source/drain region can be in the upper semiconductor layer between the first conductive pattern and the second conductive pattern.

Semiconductor devices including structures for reduced leakage current and method of fabricating the same

Disclosed are an in-cell touch type touch display device that includes a touch display panel, where a plurality of touch sensors are disposed, and a driving circuit unit. Each of the plurality of touch sensors are disposed to correspond to a plurality of subpixels, and each of the plurality of touch sensors may include one or more touch switches. The one or more touch switches disposed in each of the plurality of touch sensors divisionally drive the plurality of touch sensors by 1/n (where n is a natural number equal to or more than two).

Touch integrated circuit, and touch display device and method of driving the same

Disclosed is an in-cell touch type touch display device and a method of driving the same, which prevent an error of a touch operation from being caused by the delay of a touch report occurring in a large-screen touch display device. The touch display device includes a touch panel, including a plurality of touch sensors, and a driving circuit unit. The driving circuit unit may include a plurality of source/touch driving ICs and a touch IC. The plurality of source/touch driving ICs may supply a touch driving signal to the plurality of touch sensors. The touch IC may perform a touch operation based on touch reports received from the plurality of source/touch driving ICs.

A bonding stage is provided. The bonding stage includes a first heater disposed under a first region of a substrate having a plurality of semiconductor chips disposed thereon, a second heater disposed under a second region different from the first region of the substrate, a cooler disposed under the first heater and the second heater and blocking heat of the first heater and heat of the second heater from being transferred to lower portions of the first heater and the second heater, and a thin plate disposed on the first heater and the second heater to support the substrate and transferring the heat of the first heater and the heat of the second heater to the substrate, wherein the first heater and the second heater are independently operated.

Bonding stage and bonding apparatus comprising the same

A display device includes a display panel including an active area, in which pixels for displaying an input image and touch sensors for sensing a touch input are located, and a bezel area outside the active area and a power integrated circuit (IC) configured to produce DC (direct current) power and AC (alternating current) power and supply the DC power and the AC power to power lines disposed in the bezel area. The power lines include a first power line, to which the DC power is supplied, and a second power line, to which the AC power is supplied. The bezel area includes a first bezel area, in which the first power line is located, and a second bezel area, in which the second power line is located.

Display device with an integrated touch sensor and method of driving the same

A display device and a method for driving the same are disclosed. The display device includes a display panel including pixels and touch sensors, the display panel being time-division driven in a display driving period and a touch sensor driving period, a main power integrated circuit (IC) configured to produce a first gate high voltage and a second gate high voltage less than the first gate high voltage, a touch power IC configured to produce a first AC signal having an amplitude corresponding to the second gate high voltage, and a gate driver configured to produce a gate pulse based on the first gate high voltage to supply the gate pulse to gate lines connected to the pixels during the display driving period and supply the first AC signal to the gate lines during the touch sensor driving period.

Display device and method for driving the same

A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn&#x2014;Ag&#x2014;Cu alloy, and AgSn intermetallic compound (IMC) nanoparticles or Ag&#x2014;Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.

Solder balls and semiconductor device employing the same

Provided are a lead-free solder, a solder paste, and a semiconductor device, and more particularly, a lead-free solder that includes Cu in a range from about 0.1 wt % to about 0.8 wt %, Pd in a range from about 0.001 wt % to about 0.1 wt %, Al in a range from about 0.001 wt % to about 0.1 wt %, Si in a range from about 0.001 wt % to about 0.1 wt %, and Sn and inevitable impurities as remainder, a solder paste and a semiconductor device including the lead-free solder. The lead-free solder and the solder paste are environment-friendly and have a high high-temperature stability and high reliability.

Lead free solder bumps

A device for driving an image display device that includes an image display panel, a plurality of drivers for driving the image display panel, a Low Voltage Differential Signaling (LVDS) transmission unit for converting external image data and a plurality of control signals including frame ratio setting signals into LVDS signals and transmitting the same, an LVDS reception unit for converting the image data and the plurality of control signals including frame ratio setting signals OP, OPconverted into the LVDS signals and transmitted thus into TTL signals and forwarding the same, and a timing controller for aligning the image data to fit to the display frame ratio according to the frame ratio setting signal and the plurality of control signals from the LVDS reception unit and supplying the same to the plurality of drivers, for displaying the image on the image display panel.

Device and method for driving image display device

A low-pass filtering circuit and method are disclosed. The circuit includes a low-pass filter with a capacitor, and a multiplier configured to multiply the capacitance of the capacitor by feeding-back a high-frequency signal apparent in an output signal of the low-pass filter to the capacitor.

High-order low-pass filter circuit and method

Growing community of inventors

Hwaseong-si, South Korea

Hui Jung Kim