Samsung Electronics Co., Ltd.

Hui-chong Shin

You-Keun Han

Young-ho Lee

Sun-Young Lim

Seung-Jin Seo

Seung-Man Shin

In-Su Choi

Jung-Kuk Lee

Young-Man Ahn

Byung-Se So

Jong-Geon Lee

Kyung-Hee Han

Chil-Nam Yoon

Ho-Suk Lee

Seon-Ryeong Kang

A memory system configured to support internal data (DQ) termination of a data buffer is provided. The memory system includes a first memory module, which is a target memory module accessed by an external device, and a second memory module, which is a non-target memory module not accessed by the external device. The second memory module performs the internal DQ termination on an internal data path during an internal operation mode in which data communication is performed by using the internal data path between internal memory chips. Signal reflection over the internal data path is reduced or prohibited due to the internal DQ termination, and thus, signal integrity is improved.

Memory system for supporting internal DQ termination of data buffer

A memory module includes a plurality of semiconductor memory devices and a circuit board. The circuit board is electrically connected to the plurality of semiconductor memory devices, and a signal line is disposed in the outermost layer of the circuit board. An electrical reference for the signal line is provided in a layer of the circuit board that is not adjacent to the outermost layer. Accordingly, an impedance of the signal line may be increased, and signal integrity of a signal transmitted through the signal line may be improved.

Printed circuit board and memory module including the same

A memory module packaging test system may include a plurality of test slots into which a plurality of memory modules may be installed so that the system may simultaneously test the memory modules. The memory module packaging test system may use a server system for a registered dual in-line memory module (RDIMM) or a fully buffered dual in-line memory module (FBDIMM) so that the system may test an unbuffered dual in-line memory module (UDIMM).

Memory module packaging test system

A memory module, a memory unit, and a hub with a non-periodic clock and methods for using the same. An example memory module may include a phased locked loop, receiving an external, periodic clock and generating one or more internal periodic clocks and a plurality of memory units, receiving one of the internal periodic clocks or a non-periodic clock from an external source.

Memory module, memory unit, and hub with non-periodic clock and methods of using the same

Methods and apparatuses for entering at least one memory into a test mode are provided. At least one test MRS bit may be stored in a first register for controlling the memory. At least one test MRS code may be programmed into a second register. Each of the at least one bits stored in the first register may correspond one of the at least one test MRS codes stored in the second register.

Methods and apparatus for interfacing between test system and memory

Growing community of inventors

Seongnam-si, South Korea

Hui-chong Shin