Formosa Epitaxy Incorporation

Epistar Corporation

Hui-Ching Feng

Shyi-Ming Pan

Cheng-Kuang Yang

Kuo-Hui Yu

Chien-Pin Hsu

Wei-Kang Cheng

Chen-Hong Lee

Yun-Li Li

A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.

Light emitting diode having patterned mirror layer

Light emitting diode structure with dielectric reflective layer

Light emitting diode chip

The present invention relates to a high-voltage light-emitting device suitable for light-emitting diode chip array module. The device comprises a set of light emitting diode chips, about 18&#x2dc;25 chips, deposited on a substrate by using a non-matrix arrangement. Through the adjustments, the high-voltage light-emitting device of the present invention has optimized luminous efficiency.

High-voltage light-emitting device

An LED chip with double close-loop electrode design includes a substrate, a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer, a first electrode and a second electrode. The first-type doped semiconductor layer is disposed on the substrate, the light emitting layer is disposed on the first-type doped semiconductor layer and the second-type doped semiconductor layer is disposed on the light emitting layer. The first electrode, disposed on the first-type doped semiconductor layer, has a close-loop pattern. The second electrode, disposed on the second-type doped semiconductor layer, is located inside a region encircled by the first electrode and has a close-loop pattern. In this way, the LED chip with double close-loop electrode design is able to avoid deteriorated luminous efficiency caused by broken electrodes.

Light emitting diode chip with double close-loop electrode design

Growing community of inventors

Taoyuan County, Taiwan

Hui-Ching Feng