Taiwan Semiconductor Manufacturing Comp. Ltd.

Hui-chi Huang

Kei-Wei Chen

Kao-Feng Liao

Chun-Wei Hsu

Liang-Guang Chen

Chi-Jen Liu

Peng-Chung Jangjian

Ji Cui

Chih-chieh Chang

Chia-Jung Hsu

Li-Chieh Wu

Hsin-Ying Ho

Chun-Hao Kung

Ching-Hsiang Tsai

Tang-Kuei Chang

Ting-Hsun Chang

Tung-Kai Chen

Fang-I Chih

Wei-Wei Liang

Fu-ming Huang

A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one cationic surfactant having at least one nitrogen atom in the molecule. The slurry includes at least one liquid carrier, at least one abrasive and at least one pH adjusting agent, and has a pH of less than 7.0. The polishing method includes using the slurry composition with the cationic surfactant to polish a conductive layer. The integrated circuit comprises a block layer comprising the cationic surfactant between a sidewall of the conductive plug and an interlayer dielectric layer.

Composition and method for polishing and integrated circuit

A planarization method includes: providing a substrate, wherein the substrate includes a first region and a second region having different degrees of hydrophobicity or hydrophilicity, the second region covering an upper surface of the first region; polishing the substrate with a polishing slurry until the upper surface of the first region is exposed; and continuing polishing and performing a surface treatment by the polishing slurry to adjust the degree of hydrophobicity or hydrophilicity of at least one of the first region and the second region. The polishing slurry and the upper surface of the second region have a first contact angle, and the polishing slurry and the upper surface of the first region have a second contact angle. The surface treatment keeps a contact angle difference between the first contact angle and the second contact angle being equal to or less than 30 degrees during the polishing.

Chemical mechanical polishing method

A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one rheology modifier. The slurry includes at least one liquid carrier, at least one abrasives and at least one oxidizer. The rheology modifier is dispensed in the slurry. The polishing method includes using the slurry composition with the rheology modifier to polish a conductive layer.

Slurry composition and method for polishing and integrated circuit

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HSINCHU COUNTY, Taiwan

Hui-chi Huang