Cheil Industries Inc.

Samsung Sdi Co., Inc.

Cheil Industry, Inc.

Hui-Chan Yun

Jin-Hee Bae

Sang-Kyun Kim

Taek-Soo Kwak

Sang-Hak Lim

Bong-Hwan Kim

Sang-Ran Koh

Jong-Seob Kim

Yoong-Hee Na

Woo-Han Kim

Han-Song Lee

Eun-Su Park

Byeong-Gyu Hwang

Bo-Sun Kim

Mi-Young Kim

Jin-Wook Lee

Dong-il Han

Jung-Kang Oh

Hyeon-Mo Cho

Mi-young Kim

Hyun-Ji Song

Kwen-Woo Han

Jun-Young Jang

Seung-Hee Hong

Go-Un Kim

Eun-Seon Lee

Wan-Hee Lim

Sae-Mi Park

Woo-Jin Lee

Chang-Soo Woo

Il Yong Jung

Kun-Bae Noh

Jin-Woo Seo

Jun Sakong

Yong-Jin Chung

Jin-Gyo Kim

Jong-Dae Jeon

A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25&#xb0; C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.

Composition for forming a silica based layer, silica based layer, and electronic device

A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

Composition for forming silica layer, silica layer, and electronic device

A composition for forming a silica layer includes a silicon-containing polymer and a solvent, wherein the silicon-containing polymer has a total sum of Si&#x2014;H integral values in aH-NMR spectrum of less than or equal to about 12. The sum of the Si&#x2014;H integral values is calculated under conditions described in the specification.

Composition for forming silica layer, method for manufacturing silica layer, and silica layer

Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer

A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.

Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same

A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1, 

Resist underlayer composition and process of producing integrated circuit devices using the same

A composition for forming silica-based insulation layer includes a hydrogenated polysiloxazane including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, and having a chlorine concentration of about 1 ppm or less: 

Composition for forming silica based insulating layer, method for manufacturing composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer

A composition for forming a silica layer, a method of manufacturing the composition, a silica layer prepared using the composition, and a method of manufacturing the silica layer, the composition including hydrogenated polysilazane, hydrogenated polysiloxazane, or a combination thereof, wherein a concentration of a sum of hydrogenated polysilazane and hydrogenated polysiloxazane having a weight average molecular weight, reduced to polystyrene, of greater than or equal to about 50,000 is about 0.1 wt % or less, based on a total amount of the hydrogenated polysilazane and hydrogenated polysiloxazane.

Composition for forming a silica layer, method of manufacturing the composition, silica layer prepared using the composition, and method of manufacturing the silica layer

A filler for filling a gap includes a compound represented by the following Chemical Formula 1.SiNOH.&#x2003;&#x2003;[Chemical Formula 1]In Chemical Formula 1, a, b, c, and d represent relative amounts of Si, N, 0, and H, respectively, in the compound, 1.96&#x3c;a&#x3c;2.68, 1.78&#x3c;b&#x3c;3.21, 0&#x2266;c&#x3c;0.19, and 4&#x3c;d&#x3c;10.

Filler for filling a gap, method of preparing the same and method of manufacturing semiconductor capacitor using the same

A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1:{(SiO&#x2014;Y&#x2014;SiO)(SiO)(XSiO)}(OH)(OR). &#x2003;&#x2003;[Chemical Formula 1]

Photoresist underlayer composition and method of manufacturing semiconductor device by using the same

A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemical Formulas 1-3:  The third moiety is on a terminal end of the hydrogenated polysiloxazane, and an amount of the third moiety is about 15 to about 35% based on a total amount of Si&#x2014;H bonds in the hydrogenated polysiloxazane.

Filler for filling a gap and method for manufacturing semiconductor capacitor using the same

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Uiwang-si, South Korea

Hui-Chan Yun