International Business Machines Corporation

Chinese Academy of Sciences

Telefonaktiebolaget Lm Ericsson (publ)

Southeast University

Shanghai Lianshang Network Technology Co., Ltd.

Sony Corporation

Micron Technology Incorporated

Eaton Intelligent Power Limited

Elo Touch Solutions, Inc.

Lenovo (singapore) Pte. Ltd.

Ii-vi Delaware, Inc.

China University of Mining and Technology

Visualon, Inc.

Jiangsu Normal University

Shanghai Zhangxian Network Technology Co., Ltd.

Hui Calvin Yang

Jun Wei Zhang

Yu Chen Zhou

Ping Li

Min Cai

Hongwei Gao

Meixin Feng

Qian Sun

Masao Ikeda

Hiroshi Yoshida

Wei Wang

Hua Fang Tan

Juying Gan

Shiro Uchida

Andrew Gary Hourselt

David Noppenberger

Ramdev Kanapady

Jia Di Zhang

Bo Zhou

Yingying Zhu

Masayuki Arimochi

Shulong Lu

Xingdong Zhao

Weijun Fang

Heyun Lin

Jingxun Eric Wu

Xinhe Zheng

Yaozong Zhong

Wei Zhang

Yu Meng Li

Chao Chen

Susana Fernandez Alonso

Masaru Kuramoto

Lei Liu

Feng Zhou

Dan Zhang

Qing Shan Zhang

Qi Rong Wang

Åke Busin

Cong Wang

Lin Zhang

Gang Huang

Fajun Nan

Wen Han Luo

Jinyin Zhu

Tomomasa Watanabe

Xin Xie

Chin-Yee Lin

Takashi Tange

Hailong Yu

Ting Shi

Yi Qian

Jing Cj Cai

Chengqiong Xie

Pei Hu

Jia Ming Zhang

Zhen Xu

Wei Peng Nian

Jianyu Liu

Yanqi Guo

Xiaodong Shang

Chunlong Xu

Yingsi Zhou

Qingquan Xiao

Lujun Zhang

Ning Jiang

Yaqin Sun

Hao Zheng

Hui Ci

Lifang Xue

WeiXiong Chen

WenKui Li

Hanyue Yang

Dongfang Liu

Xiaoyuan Chen

Linfeng Lu

Linhai Chen

Yuan Yin

Yufeng Xiao

Guangxu Li

Shukang Lv

Ichiro Nomachi

Shuai Su

Jianxun Liu

Xiaoning Zhan

Nicholas Stone

Chunyan Song

Qi Tan

Qiaozhen Li

Ruijuan Wang

Qing Qian

Meiyan Zhang

Li Yang

Gefei Feng

Hui Juan Yan

Xiaodong Xu

Yong Qin

A high-capacity miniature cartridge fuse is provided. The fuse includes a housing, a fusible element, and first and second ferrules fabricated from aluminum alloy. The aluminum alloy ferrules is fabricated to withstand high pressure generated inside the housing as a result of arcing and to stay in place after repeated temperature and pressure changes caused by at least one of i) current or ii) arcing during short circuit events. The aluminum alloy plated with a first metal plating fabricated from a first metal different from the aluminum alloy and a second metal plating fabricated from a second metal different from the first metal, the second metal plating overlaying the first metal plating. Each of the first and second ferrules includes a side wall and an end wall, wherein the end wall includes a boss extending toward an interior of the housing.

Aluminum alloy miniature cartridge fuses

Electronic device

The present application discloses a semiconductor device and a manufacturing method thereof. The manufacturing method comprises manufacturing a semiconductor material layer comprising two laminated semiconductor layers between which an etching transition layer is provided; and etching a part of one of semiconductor layers located in a selected region until etching is stopped after reaching or entering the etching transition layer, subjecting the part of the etching transition layer located in the selected region to thermal decomposition through thermal treatment to be completely removed, and realizing termination of thermal decomposition on another semiconductor layer, so as to precisely form a trench structure in the semiconductor material layer. The present application can achieve precise control of the depth of the trench etched on the semiconductor material to thoroughly avoid surface damage caused by etching and ensure that the electrical characteristic of the device is not affected by fluctuation of the etching process.

Semiconductor device and manufacturing method thereof employing an etching transition layer

Disclosed is an insulation detection circuit for voltage balance, including a bus battery, a bus positive voltage dividing circuit, a bus negative voltage dividing circuit, a differential amplification circuit and a micro controller unit (MCU) module. The bus battery is respectively connected with the bus positive voltage dividing circuit and the bus negative voltage dividing circuit, the bus positive voltage dividing circuit and the bus negative voltage dividing circuit is respectively connected with the differential amplification circuit, and the differential amplification circuit being connected with the MCU module; the bus battery is configured for supplying power to each module; the bus positive voltage dividing circuit is configured for converting a positive voltage of the bus from high voltage to detectable low voltage; the bus negative voltage dividing circuit is configured for converting a negative voltage the bus from high voltage to detectable low voltage.

Insulation detection circuit for voltage balance

A memory device provides a memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.

Memory with improved cross temperature reliability and read performance

A memory motor winding multiplexing control method and system for flux linkage observation. The method comprises the following steps: I: when the magnetization state of a memory motor needs to be adjusted, selecting a flux regulation current reference value according to a rotation speed of the motor; II: by means of current feedback control, driving a direct-current flux regulation winding to generate a flux regulation current so as to adjust the magnetization state of a permanent magnet; III: when the memory motor is operating normally, collecting an induction voltage of the flux regulation winding and extracting an induced electromotive force of the flux regulation winding; and IV: using the induced electromotive force of the flux regulation winding to calculate the flux linkage of the permanent magnet for vector control of the motor.

Memory motor winding multiplexing control method and system for flux linkage observation

A group III nitride enhancement-mode HEMT based on a composite barrier layer structure and a manufacturing method thereof are provided. The HEMT includes first and second semiconductors respectively serving as a channel layer and a barrier layer, a third semiconductor serving as a p-type layer, a source, a drain and a gate, wherein a recessed structure is formed in the region of the barrier layer corresponding to the gate, which is matched with the third semiconductor and the gate to form a p-type gate, and the second semiconductor includes first and second structure layers successively arranged on the first semiconductor; relative to the selected etching reagent, the first structure layer has higher etching resistance than the second structure layer.

Group III nitride enhancement-mode HEMT based on composite barrier layer structure and manufacturing method thereof

A high-capacity miniature cartridge fuse is provided. A fuse includes a cylindrical housing, a fusible wire, and first and second deep-drawn ferrules fabricated from aluminum alloy. The aluminum is plated with nickel. The ferrule includes a side wall and an end wall. The side wall surrounds the first or second end of the housing, and has a thickness of approximately 0.50 mm or less. The end wall includes a boss extending toward an interior of the housing, and has a thickness greater than the thickness of the side wall.

The present disclosure generally relates to printed circuit boards or printed circuit board assemblies for fiber optic communications. In one non-limiting embodiment, a method of assembling an optoelectronic assembly includes providing a printed circuit board with a first metal coating and an optical component with a second metal coating. The method further includes positioning the optical component relative to the printed circuit board with at least some portion of the first metal coating aligned with or adjacent to at least some portion of the second metal coating, and applying solder between the first metal coating and the second metal coating to couple the optical component and the printed circuit board.

Surface mounting techniques for fiber optics printed circuit board assemblies using metal coatings and tabs

The invention provides novel CRISPR/Cas compositions and uses thereof for targeting nucleic acids. In particular, the invention provides non-naturally occurring or engineered RNA-targeting systems comprising a novel RNA-targeting Cas13e or Cas13f effector protein, and at least one targeting nucleic acid component such as a guide RNA (gRNA) or crRNA. The novel Cas effector proteins are among the smallest of the known Cas effector proteins, at about 800 amino acids in size, and are thus uniquely suitable for delivery using vectors of small capacity, such as an AAV vector.

Type VI-E and type VI-F CRISPR-Cas system and uses thereof

The present invention discloses a built-in hybrid permanent magnet memory motor with local magnetic circuits in parallel, including a hybrid permanent magnet rotor, a stator, armature windings and a rotating shaft. The armature windings are disposed on the stator, and the stator is disposed outside the hybrid permanent magnet rotor. The hybrid permanent magnet rotor includes a rotor core, first permanent magnets, second permanent magnets and V-shaped magnetic barriers. The rotor core is disposed outside the rotating shaft, the V-shaped magnetic barriers are disposed inside the rotor core, the V-shaped magnetic barriers with openings facing outwards are equally distributed in a circumferential direction of the rotor core, the first permanent magnet is disposed in the opening of the V-shaped magnetic barrier, the second permanent magnet is disposed between the two adjacent V-shaped magnetic barriers, a coercivity of the first permanent magnet is greater than a coercivity of the second permanent magnet, and cross sections of the first permanent magnets and the second permanent magnets are in a straight line. According to the present invention, the problem that the size design of the permanent magnet is limited by the space position is solved, and the anti-demagnetization ability of the low-coercivity permanent magnets and the flux weakening ability of the motor are enhanced.

Built-in hybrid permanent magnet memory motor with local magnetic circuits in parallel

A memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.

The present invention relates to a GPR84 receptor antagonist and use thereof. The GPR84 receptor antagonist of the present invention has a structure as represented by formula (I), the definitions of R1, R2, R3, R4, L, L, L, L, L, L, Y, Z, and rings A, B, C, and D are as described in the description and claims. The GPR84 receptor antagonist of the present invention can competitively inhibit the activation of the receptor caused by an agonist of GPR84, and can be used in the preparation of a medicament for treating related diseases caused by high expression or high excitability of GPR84 receptor, the diseases including multiple sclerosis, inflammatory bowel disease, arthritis and the like. 

GPR84 receptor antagonist and use thereof

A light receiving/emitting elementincludes: a light receiving/emitting layerin which a plurality of compound semiconductor layers are stacked; and an electrodehaving a first surfaceA and a second surfaceB and made of a transparent conductive material, in which the second surface faces the first surfaceA, and the electrode is in contact, at the first surfaceA, with the light receiving/emitting layer. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surfaceA of the electrodeis higher than concentration of the additive contained in the transparent conductive material near the second surfaceB of the electrode

Light receiving/emitting element, solar cell, optical sensor, light emitting diode, and surface emitting laser element

Growing community of inventors

Shanghai, China

Hui Calvin Yang