Boe Technology Group Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Hefei Boe Optoelectronics Technology Co., Ltd.

Hui An

Binbin Cao

Xianxue Duan

Hengbin Li

Chengzhi Ye

Fangfang Li

Kui Gong

Dezhi Xu

The present application discloses a display substrate having a base substrate and a pixel definition layer for defining a plurality of subpixel regions on the base substrate. The pixel definition layer has a first side and a second side opposite to each other, the second side being on a side of the first side distal to the base substrate. The pixel definition layer has a first cross-section along a plane substantially parallel to the base substrate, the first cross-section being between the first side and the second side. An orthographic projection of the first cross-section on the base substrate substantially covers orthographic projections of the first side and the second side on the base substrate.

Display substrate, display apparatus, method of fabricating display substrate

A thin film transistor, a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor includes a first electrode on a substrate, a first insulating layer on the first electrode with the first insulating layer having a sidewall, an active layer on the first insulating layer with the active layer connected to the first electrode and comprising a portion on the sidewall which is configured as a channel of the thin film transistor, and a second electrode on the active layer with the second electrode connected to the active layer.

Thin film transistor, manufacturing method thereof, array substrate and display device

A display substrate and a display apparatus are provided. The display substrate includes a film layer and a blocking structure. The film layer includes a via surrounded by the blocking structure. The blocking structure is at an edge of the via.

Display substrate and display apparatus

A thin film transistor and a method for manufacturing the same, an array substrate, and a display device are provided in embodiments of the disclosure. The method for manufacturing a thin film transistor in embodiments of the disclosure forms a plurality of strip-shaped protrusions on a substrate by a patterning process before forming structures of various layers of the thin film transistor, and then forms sequentially a gate electrode, a gate insulating layer, an active layer, a source-drain electrode on the plurality of strip-shaped protrusions; in other words, the thin film transistor is prepared, whose channels are aligned with and shaped to be similar to the plurality of strip-shaped protrusions, in a widthwise direction thereof.

Growing community of inventors

Beijing, China

Hui An