Growing community of inventors

Somerville, MA, United States of America

Hugues Marchand

Average Co-Inventor Count = 2.76

ph-index = 5

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 123

Hugues MarchandBrendan Jude Moran (6 patents)Hugues MarchandUmesh Kumar Mishra (3 patents)Hugues MarchandJames Stephen Speck (3 patents)Hugues MarchandOleg Laboutin (3 patents)Hugues MarchandAnthony J Lochtefeld (2 patents)Hugues MarchandWayne Johnson (2 patents)Hugues MarchandChen-Kai Kao (2 patents)Hugues MarchandChien-Fong Lo (2 patents)Hugues MarchandXiang Gao (1 patent)Hugues MarchandHugues Marchand (11 patents)Brendan Jude MoranBrendan Jude Moran (35 patents)Umesh Kumar MishraUmesh Kumar Mishra (158 patents)James Stephen SpeckJames Stephen Speck (131 patents)Oleg LaboutinOleg Laboutin (4 patents)Anthony J LochtefeldAnthony J Lochtefeld (114 patents)Wayne JohnsonWayne Johnson (3 patents)Chen-Kai KaoChen-Kai Kao (2 patents)Chien-Fong LoChien-Fong Lo (2 patents)Xiang GaoXiang Gao (13 patents)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. University of California (6 from 15,458 patents)

2. Iqe Plc (3 from 27 patents)

3. Micron Technology Incorporated (1 from 37,905 patents)

4. Qromis, Inc. (1 from 53 patents)


11 patents:

1. 11133408 - Dielectric passivation for layered structures

2. 10580871 - Nucleation layer for growth of III-nitride structures

3. 10347794 - Gallium nitride wafer substrate for solid state lighting devices and associated systems

4. 9917156 - Nucleation layer for growth of III-nitride structures

5. 9691712 - Method of controlling stress in group-III nitride films deposited on substrates

6. 9129977 - Method of controlling stress in group-III nitride films deposited on substrates

7. 9012253 - Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods

8. 8525230 - Field-effect transistor with compositionally graded nitride layer on a silicaon substrate

9. 7816764 - Method of controlling stress in gallium nitride films deposited on substrates

10. 7687888 - Method of controlling stress in gallium nitride films deposited on substrates

11. 7655090 - Method of controlling stress in gallium nitride films deposited on substrates

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12/3/2025
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