Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Hugues Leininger

Jean-Pierre Oddou

Axel Crocherie

Stéphane Allegret-Maret

Simon Guillaumet

Christophe Legendre

Marc Vincent

Jérôme Alieu

A color image sensor including an array of pixels is formed in a semiconductor layer having a back side that receives an illumination. Insulated conductive walls penetrate into the semiconductor layer from the back side and separate the pixels from one another. For each pixel, a color pixel penetrates into from 5 to 30% of a thickness of the semiconductor layer from the back side and occupies at least 90% of the surface area delimited by the walls. An electrically-conductive layer extends from the lateral wall of the filter all the way to the walls.

Methods of manufacturing a color image sensor having an array of pixels with color filters

Color image sensor and method of manufacturing the same

A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.

Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production

Growing community of inventors

Crolles, France

Hugues Leininger