Aixtron Se

Hugo Silva

Brian Lu

Martin Dauelsberg

Sasangan Ramanathan

Adam Boyd

Johannes Lindner

Daniel Claessens

Gi Youl Kim

Nico Jouault

Pierre-Arnaud Bodin

Victor Saywell

Mark Edlef Oppen

Fred Crawley

Woong Park

Keith Allen

Young Jin Jang

Greg Siu

In a CVD reactor, flushing gases of different heat conductivities are used to flush a gap between a substrate holder and a heating system. The lower side of the substrate holder is configured differently in a central region with respect to the heat transmission from the heating system to the substrate holder, than in a circumferential region that surrounds the central region. The gap has such a gap height that, upon a change of a first flushing gas with a first heat conductivity to a second flushing gas with a second heat conductivity, the heat supplied from the heating system to the substrate holder changes differently in the circumferential region than in the central region.

Methods for controlling the substrate temperature using a plurality of flushing gases

A device includes at least a first electrically conductive contact plate, at least a second electrically conductive contact plate and a plurality of heating elements connected electrically in parallel. Each of the plurality of heating elements includes at least one resistance heating unit, respectively. Each of the heating elements is connected by means of a first connecting contact to the heating elements is connected by means of a first connecting contact to the first contact plate and by means of a second connecting contact to the second contact plate, in which both contact plates lie in a common first plane. The resistance heating units are arranged along a spiral or arched line around a center of the device. To expand the service life of the device at reduced manufacturing costs, a plurality of heating units are arranged consecutively or nested with each other along the ached or spiral line, and both the first and second contact plates comprise interlocking comb-like contact extensions.

Heating device

A gas inlet member of a CVD reactor includes a gas inlet housing having a gas distribution volume supplied with a process gas by a feed line and a multiplicity of gas lines, each formed as a tube and engaging openings of a gas outlet plate arranged in front of an inlet housing wall, and through which the process gas enters a process chamber. A coolant chamber adjoins the gas inlet housing wall and a coolant cools the gas inlet housing wall and outlet ends of the gas lines that are in heat-conductive contact with the gas inlet housing wall. The gas outlet plate is thereby thermally decoupled from the gas inlet housing wall such that the gas outlet plate, which is acted on by radiation heat coming from the process chamber, heats up more intensely than the outlet ends which extend into the openings of the gas outlet plate.

Gas inlet member of a CVD reactor

There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or Ncontaining inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of the gas used in forming the TiSiN thin film is Ti containing gas: 9&#xd7;10Torr or less, Si containing gas: 1&#xd7;10&#x2dc;3&#xd7;10Torr and N containing gas: 7&#xd7;10&#x2dc;6&#xd7;10Torr, and a pressure range of the gas is 500 mTorr&#x2dc;5 Torr and the Si content of the formed TiSiN thin film is 20 atom % or less.

Method for forming TiSiN thin film layer by using atomic layer deposition

Growing community of inventors

Aachen, Germany

Hugo Silva