Agere Systems Inc.

Lgs Innovations LLC

Resonance Semiconductor Corporation

Agere Systems Guardian Corp.

Lucent Technologies Inc.

Lsi Corporation

Cymatics Laboratories Corp.

Hugo Fernando Safar

Peter Ledel Gammel

Rajarishi Sinha

John William Osenbach

Thomas Herbert Shilling

L Richard Carley

Ralph Salvatore Moyer

Louis Caley Chomas

Juan Alejandro Herbsommer

Bradley Paul Barber

Brijesh Vyas

John McKenna Brennan

Marco Mastrapasqua

Steven Herbert Simon

Jeffery John Gilbert

Patrick Joseph Carberry

Aris Leonidas Moustakas

George John Libricz, Jr

Marin Stoytchev

Joseph Michael Freund

Isik C Kizilyalli

Yiu-Huen Wong

Ashok J Maliakal

Bailey R Jones

Rafael Nathan Kleiman

Timothy Brooks Bambridge

Osvaldo J Lopez

Joel Lott

David M Boulin

Paul Bollond

Mike Santo

Jeffrey John Gilbert

Joseph Micheal Freund

The present application is directed an optical gyroscope. The optical gyroscope includes a substrate including a first and a second waveguide disposed thereon. One or both of the waveguides may be doped with a rare-earth material. A crossing element is disposed between the first and the second waveguides to form a substantially orthogonal connection therebetween. The application is also directed to a system including an optical gyroscope. The application is further directed to a method of observing characteristics of the optical gyroscope.

Active waveguide optical gyroscope

The present application is directed to a solid state device for detecting neutrons. The device includes a semiconductor substrate having pores. The device also includes a p- or n-type doping layer formed on a surface of the pores. Moreover, a layer of fill material is formed on the p- or n-type doping layer. The present application also is directed to a method of making a solid state device. Further, the present application is directed to a method of detecting efficiency of solid state detector devices.

Solid state detection devices, methods of making and methods of using

An apparatus includes a gas dispersal plate and an adapter structure. The gas dispersal plate has a plurality of gas dispersion orifices, wherein one or more of the gas dispersion orifices have a first portion with a first cross-section configured to allow entry of gas and a second portion having a second cross-section configured to allow exit of gas, the first cross-section being smaller than the second cross-section.

Gas dispersion disc assembly

A chemical sensor is provided. The sensor includes at least one lightguiding element having an optical core. The lightguiding element comprises a layer of graphene situated in sufficient proximity to the core to exhibit evanescent wave absorption of optical energy in at least one optical mode guided in the core.

Method and apparatus for graphene-based chemical detection

The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.

Integrated acoustic bandgap devices for energy confinement and methods of fabricating same

A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.

Protected resonator

The specification describes a plastic overmolded package for high power devices that has a very low lead count, typically fewer than eight, and in a preferred embodiment, only two. The leads occupy essentially the same linear space as the multiple leads in a conventional package and thus have a wide-blade configuration. To improve mechanical integrity, the leads in the package are provided with retention slots to add back the equivalent of the plastic joints in the spaces that were eliminated due to the wide-blade design. The retention slots extend in the width dimension of the leads.

Leadframe designs for plastic overmold packages

A semiconductor device package comprises a container including a base and sidewalls. The base is configured to support a semiconductor device chip, and a lead frame extends through at least one of the sidewalls. A portion of the lead frame within the sidewall has at least one aperture penetrating into the lead frame. The sidewall material extends into the aperture, thereby forming a strong interfacial bond that provides a low leakage, sidewall-lead-frame interface. The base has a reentrant feature that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby forming a low leakage base-sidewall interface. The top surface of the base has a groove that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby enhancing the low leakage base-sidewall interface.

Semiconductor device package with base features to reduce leakage

The present invention provides a process for manufacturing a semiconductor device that can be incorporated into an integrated circuit. The method includes, forming a first doped layer of isotopically enriched silicon over a foundational substrate, forming a second layer of an isotopically enriched semiconductor material silicon over the first doped layer, and constructing active devices on the second layer. The device includes a first doped layer of an isotopically enriched semiconductor material and a second layer of an isotopically enriched semiconductor material located over the first doped layer, and active devices located on the second layer.

Device and method using isotopically enriched silicon

An electronic module has a non-conducting substrate having at least one opening and a die/carrier assembly mounted within the opening in the substrate. The assembly has a conducting carrier and one or more integrated circuit (IC) dies mounted to the carrier. The invention may be implemented as an electronic system comprising a circuit board (CB) and at least one such electronic module mounted to the CB.

Packaging for electronic modules

Device packages often include walls build on a heat sink that surrounds a device die that thermally interacts with the heat sink. Use of raised or depressed feature on said heat sink that contacts the walls improves the cohesiveness of the package. By appropriately positioning these features contaminant infusion into the package is improved without degrading cohesiveness.

Device package

Devices such as amplifiers are built on a heat sink having a perimeter wall surrounding active electronic devices. Surprisingly formation of wire bonds to such devices tends to be degraded if they have an aspect ratio greater than 2:1. This problem is overcome by forming wire bonds before such walls have a height of 30 mils and after bond formation extending the walls to their final height.

Device packages

Growing community of inventors

Westfield, NJ, United States of America

Hugo Fernando Safar