Skyworks Solutions, Inc.

Conexant Systems, Inc.

Hugh J Finlay

Mark Bloom

David Steven Ripley

Paul Raymond Andrys

Terry J Shie

Kevin M Hoheisel

Shiaw Wen Chang

Thomas L Fowler

Nai-Shuo Cheng

Bon-Seok Park

A constant current bias approach that receives an input bias voltage and maintains a temperature independent constant current bias in a linear amplifier device. Integrated sense circuitry protects against unacceptable input voltages to guarantee bias stability. Fabrication in multiple semiconductor technologies and assembly into a single package allows for optimum cost and performance of DC bias and RF amplifier sections.

Constant current biasing circuit for linear power amplifiers

A power amplifier having a phase shift and impedance transformation element is disclosed. The power amplifier comprises a plurality of amplification paths, a first phase shift element at an input of each amplification path and a second phase shift element at an output of each amplification path. The amplifier also comprises an impedance transformation element associated with the second phase shift element and a power combiner configured to combine an output of each amplification path into a single output.

Load variation tolerant radio frequency (RF) amplifier

A transistor with a novel compact layout is provided. The transistor has an emitter layout having a track with a first feed point and a second feed point whereby current flows through both the first feed point and the second feed point. A base terminal, a collector terminal, and an emitter terminal are provided. When in operation, current flows from the collector terminal to the emitter terminal based on the amount of current provided to the base terminal. A sub-collector layer is formed on a substrate. A collector layer is formed on the sub-collector layer. A base pedestal is formed on the collector layer. A base contact for coupling to the base terminal and an emitter is formed on the base pedestal. An emitter contact for coupling to the emitter terminal is formed on the emitter. A collector contact for coupling to the collector terminal is deposited in a trench that is formed in the collector layer and the sub-collector layer.

Transistor having a novel layout and an emitter having more than one feed point

The bias control selectively provides for bias of a power amplifier based upon a bandgap voltage generated by the bias control, or by a bias voltage external to the bias control. A controller controls the selection of either the bandgap voltage or external bias voltage. The bias control is fabricated in a first semiconductor material capable of operating at low voltage supply levels, such as complementary metal oxide semiconductor (CMOS) material and may be fabricated on an integrated circuit common with a power amplifier.

Configurable power amplifier and bias control

Various embodiments of a novel transistor layout having improved electrical and heat dissipation characteristics are disclosed. Several embodiments include various intrinsic components contoured to the shape of the emitter. The various intrinsic components may include a collector layer center portion, a collector contact, a base pedestal, and/or a base contact. Additional embodiments include improved heat dissipation within single transistors. Still further embodiments include improved heat dissipation across a plurality of transistors.

Transistor layout having a heat dissipative emitter

A transistor with a novel compact layout is provided. The transistor has an emitter layout having a track with a first feed point and a second feed point whereby current flows through both the first feed point and the second feed point. A base terminal, a collector terminal, and an emitter terminal are provided. When in operation, current flows from the collector terminal to the emitter terminal based on the amount of current provided to the base terminal. A sub-collector layer is formed on a substrate. A collector layer is formed on the sub-collector layer. A base pedestal is formed on the collector layer. A base contact for coupling to the base terminal and an emitter is formed on the base pedestal. An emitter contact for coupling to the emitter terminal is formed on the emitter. A collector terminal for coupling to the collector contact is deposited in a trench that is formed in the collector layer and the sub-collector layer.

Growing community of inventors

Moorpark, CA, United States of America

Hugh J Finlay