Industrial Technology Research Institute

Nexcom International Co., Ltd.

First Hi-tec Enterprise Co., Ltd.

Huey-Ru Chang

Min-Lin Lee

Shinn-Juh Lai

Shinn-Juh Lay

Chien-Min Hsu

Ted C Ho

Jiin-Shing Perng

Ching-Shan Chang

Sheng-Che Hung

Hung-I Liu

Ray-Fong Hong

Chin Sun Shyu

Stephen Chung

Jungle Lee

Randy Wu

Yu-Mei Cheng

A multi-layer circuit structure includes a differential transmission line pair and at least one conductive pattern. The differential transmission line pair includes first and second transmission lines disposed side by side. Each of the first and second transmission lines includes first and second segments connected to each other. An spacing between the two first segments is non-fixed, and an spacing between the two second segments is fixed. A first zone is located between the two first segments, a second zone is opposite to the first zone and located outside the first segment of the first transmission line, and a third zone is opposite to the first zone and located outside the first segment of the second transmission line. The conductive pattern is coplanar with the differential transmission line pair and disposed on at least one of the first, second and third zones. The conductive pattern is electrically connected to a reference potential and electrically insulated from the differential transmission line pair.

Multi-layer circuit structure

The disclosure relates to a power device package structure. By employing the metal substrate of the power device package structure serve as a bottom electrode of a capacitor, the capacitor is integrated into the power device package structure. A dielectric material layer and a upper metal layer sequentially disposed on the metal substrate.

Power device package structure

A capacitor device is provided. The capacitor device includes at least one capacitor. The capacitor device also includes a first capacitor and a first filter coupling the first capacitor and a conductive region, wherein the first capacitor has a first resonance frequency and the first filter is configured to operate at a first frequency band covering the first resonance frequency.

Capacitor devices with a filter structure

A capacitive device is provided. The capacitive device includes a first electrode and a second electrode below the first electrode and spaced apart from the first electrode, wherein at least one of the first electrode and the second electrode includes a plurality of conductive step sections, the plurality of conductive step sections having different heights. The capacitive device also includes an insulating region between the first electrode and the second electrode; and at least one slot formed on one of the first electrode and the second electrode.

Capacitor devices having multi-sectional conductors

An embedded capacitor device within a circuit board having an integrated circuitry thereon is provided. The circuit board has a common coupling area under the integrated circuitry. The embedded capacitor device includes a first capacitor section providing at least one capacitor to a first terminal set of the integrated circuitry and a second capacitor section providing at least one capacitor to a second terminal set of the integrated circuitry. A portion of the first capacitor section is in the common coupling area and has its coupling to the first terminal set located in the common coupling area. Similarly, a portion of the second capacitor section is in the common coupling area and has its coupling to the second terminal set located in the common coupling area.

Embedded capacitor device having a common coupling area

A unitary buried array capacitor and microelectronic structures incorporating such capacitors are disclosed. A unitary buried array capacitor can be formed by a top layer of electrode, a middle layer of dielectric, and a bottom layer of electrode. A first electrode lead, a second electrode lead and at least one interconnect line pass through the three layers while only the first electrode lead making electrical contact with the top layer of electrode and only the second electrode lead making electrical contact with the bottom electrode.

Buried array capacitor and microelectronic structure incorporating the same

A coaxial via hole structure used in a carrier is disclosed. The coaxial via hole includes an outer cylinder-shaped conductor, an inner cylinder-shaped conductor and an intermediate fill. The outer cylinder-shaped conductor extends along a first direction. The inner cylinder-shaped conductor is disposed in the outer cylinder-shaped conductor and also extends along the first direction. The intermediate fill is between the outer cylinder-shaped conductor and the inner cylinder-shaped conductor and is made of insulating material or electrical-resistant material. The coaxial via hole structure can be applied as a capacitor or a resistor and has the function of signal shielding.

Coaxial via hole and process of fabricating the same

A packaging structure with low switching noises is disclosed. In this structure, a chip capacitor is connected to a chip. The chip capacitor is a capacitor structure formed using a high dielectric material to provide a better noise filtering effect. Therefore, the invention can effectively lower switching noises.

Growing community of inventors

Hsinchu, Taiwan

Huey-Ru Chang