National Science Council

Huei-Jung Wang

Nan-Chung Wu

Shin-Gei Chen

This patent application discloses a new process for preparing the sintered article of aluminum nitride at low temperature. It comprises coating aluminum metal film on aluminum nitride powder, then directly molding or homogeneously cold pressing, followed by sintering at 1650.about.175O.degree. C., and finally forming dense aluminum nitride article.

Sintering process for AIN powder coated with Al film

Disclosed is a process for producing an ultrafine powder of aluminum nitride. This process is characterized in adding 1-5 wt % of aluminum nitride powder to the mixture of alumina and carbon black and heating the resulting powder mixture at a temperature of 1550.degree.-1650.degree. C. in an atmosphere of nitrogen. Preferably, prior to heating, the powder mixture is shaped into a compact. The aluminum nitride powder prepared by the process of the present invention has an average particle diameter of about 0.45 micron and a purity of above 98.1%, and is therefore a very suitable material for making printed circuit boards and heat release boards for IC, LSI and VLSI.

Growing community of inventors

Tainan, Taiwan

Huei-Jung Wang