Intel Corporation

Akashic Memories Corp.

Intel Magnetics, Inc.

United Module Corporation, Inc.

Akshic Memories Corporation

Hudson A Washburn

Jarrett L Hamilton

Eric K Li

John C Scott

Nal T Viswanathan

A flexible, modular thin film deposition machine comprises a number of batch process stations which define a batch process path. At least one of the batch process stations is a thin film deposition station including a serial deposition chamber and an inter-chamber disk transfer mechanism. The disks move in batches along the process path, being individually processed only at the deposition station. Within the serial sputtering chambers of at least one deposition station there is at most partial environmental separation, whereas between different deposition stations the separation is complete. The resulting simplification of the transport mechanism provides for a high throughput rate while simultaneously minimizing contamination of individual thin film layers.

Modular deposition system having batch processing and serial thin film deposition

Modular deposition system having batch processing and serial thin film

A flexible, modular sputtering machine comprises a number of batch process stations which define a batch process path. At least one of the batch process stations is a sputtering station including a serial sputtering chamber and an interchamber disk transfer mechanism. The disks move in batches along the process path, being individually processed only at the sputtering chamber. A preferred sputtering source is also provided which allows selective sputtering of multiple materials within a single sputtering chamber. The selection of sputtering materials is controlled by varying the magnetic field within the sputtering chamber. A cassette for transporting and holding batches of disk substrates during batch processing allows individual access to the disks for the interchamber disk transfer mechanism.

Modular sputtering machine having batch processing and serial thin film

A new high quality, low cost, thin-film magnetic recording member is provided, which has a coercive field strength greater than 650 Oe, a saturation magnetization greater than 10,000 Gauss, and a squareness ratio of 0.9 or larger. The member includes a substrate on which is directly sputter deposited a chromium layer, without the use of an intervening nickel-containing layer between the substrate and the chromium. A nickel-cobalt recording layer is then sputter deposited directly onto the chromium layer. In the preferred mode, the start of that nickel-cobalt deposition begins less than 100 seconds after the chromium deposition is terminated and is followed by the sputtering of a protective layer. Before the chromium deposition, the substrate is preheatead to drive off adsorbed gases, and to establish the proper conditions for the chromium deposition. The substrate is also heated during the time between when the chromium deposition ends and the nickel-cobalt deposition begins.

Method of making a thin film magnetic disk

Confinement channels for magnetic bubbles are formed in a magnetic garnet layer. In the preferred embodiment, the magnetic garnet layer is etched to make it thinner than those regions not directly beneath the permalloy members. This defines channels in the garnet layer having better propagation characteristics (e.g., more garnet). This results in more reliable bubble propagation.

Confinement channels for magnetic bubble memory devices

A method for selecting permalloy propagation elements for a magnetic bubble memory is described. The invented method recognizes that propagation characteristics are not symmetrical for a given propagation element. Different propagation elements are fabricated and their propagation characteristics are determined in different directions. Then propagation elements are selected so as to optimize propagation for each direction.

Method for selecting propagation elements for magnetic bubble memory

A method for adjusting output signal levels from a magnetic bubble detector. Portions of the chevron stacks located adjacent to either the detector element or dummy element are selectively removed. This removal changes the magnetic field at either one of these elements, thereby adjusting the detector output. This removal may be performed with laser trimming techniques or by etching.

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Santa Clara, CA, United States of America

Hudson A Washburn