Asml Netherlands B.v.

Hubertus Antonius Geraets

Gerardus Carolus Johannus Hofmans

Sven Gunnar Krister Magnusson

Mark Zellenrath

Bob Streefkerk

Marcel Beckers

Leon Martin Levasier

Adrianus Hendrik Koevoets

Siegfried Alexander Tromp

Bart Peter Bert Segers

Christianus Wilhelmus Johannes Berendsen

Henricus Jozef Castelijns

Arjan Gijsbertsen

Peter Schaap

Natalia Viktorovna Davydova

A method for compensating for an exposure error in an exposure process of a lithographic apparatus that comprises a substrate table, the method comprising: obtaining a dose measurement indicative of a dose of IR radiation that reaches substrate level, wherein the dose measurement can be used to calculate an amount of IR radiation absorbed by an object in the lithographic apparatus during an exposure process; and using the dose measurement to control the exposure process so as to compensate for an exposure error associated with the IR radiation absorbed by the object during the exposure process.

Method for compensating for an exposure error, a device manufacturing method, a substrate table, a lithographic apparatus, a control system, a method for measuring reflectivity and a method for measuring a dose of EUV radiation

A lithographic apparatus comprising a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a grating in its cross-section to form a patterned EUV radiation beam, and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero.

Lithographic apparatus and method

A method of calibrating an inspection apparatus. Obtaining a surface level measurements (LS) at respective level sensing locations LS(x,y). Determining focus settings (LP, LP) for exposure field regions (EF, EF) in accordance with surface level measurements (LS, LS) having level sensing locations corresponding to the respective exposure field region. Exposing exposure field regions (EF, EF) with focus offsets (FO, FO) defined with reference to the respective focus settings (LP, LP) to produce target patterns at respective target locations. Obtaining focus-dependent property measurements, such as Critical Dimension (CD) and/or side wall angle (SWA) of the target patterns measured using the inspection apparatus; and calibrating the inspection apparatus using the focus-dependent property measurements (CD/SWA) and the respective focus offsets (FO, FO). The calibration uses surface level measurements (e.g., LS()) having a level sensing location (e.g., LSL()) corresponding to the respective target location (TL). Each offset value is thus corrected in the calibration for the local wafer stack unflatness present during exposure.

Calibration method and inspection apparatus

A method of measuring focus of a lithographic projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve.

Method of measuring focus of a lithographic projection apparatus

A method of measuring focus of a lithographic projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset FO. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve. The method according to an embodiment of the invention may result in a focus-versus alignment shift sensitivity up to 50 times higher (typically dX,Y/dZ=20) than conventional approaches.

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Arendonk, Belgium

Hubertus Antonius Geraets