Infineon Technologies Ag

Siemens Aktiengesellschaft

Hubert Werthmann

Reinhard Losehand

Ulf Bartl

Gabriele Bettineschi

Uwe Seidel

Josef-Paul Schaffer

Michael Schrenk

Wolfgang Walter

Wolfgang Hartung

Carsten Ahrens

Maciej Wojnowski

Stefan Pompl

Christian Herzum

Bernd Eisener

Alexander Glas

Francesca Arcioni

Raimund Peichl

Juliane Laurer

Cartens Ahrens

A semiconductor device includes a semiconductor body including an upper surface, input and output terminals disposed on the upper surface of the semiconductor body, first and second p-n junction devices that are monolithically integrated in the semiconductor body, and a signal line protection circuit connected between the input and output terminals and comprising a low-pass filter and a voltage clamping device, wherein each of the low-pass filter and the voltage clamping device include the first and second p-n junction devices.

Protection device with p-n junction devices monolithically integrated in a semiconductor body

A common-mode suppressor for eliminating common-mode noise in high frequency differential data transmission systems and an associated method includes a long coiled differential transmission line configured to transfer data between a source and a load. The differential transmission line comprises a first conductive wire and a second conductive wire which are inductively and capacitively coupled and are laterally aligned or vertically aligned with each other. Further, the differential transmission line is matched for differential signals and un-matched for common-mode noise.

Common-mode suppressor based on differential transmission line

An ESD (electrostatic discharge) protection device includes a first III-nitride p-i-n diode and a second III-nitride p-i-n diode connected to the first III-nitride p-i-n diode in an antiparallel arrangement configured to provide voltage clamping at 5V or less under forward bias of either the first or second III-nitride p-i-n diode for transient current in both forward and reverse directions. A corresponding method of manufacturing the ESD protection device is also provided.

III-nitride based ESD protection device

A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a common interface.

Semiconductor device comprising a fuse structure and a method for manufacturing such semiconductor device

An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer including a guard ring in those areas of the surface and of the active layer which are adjacent to the insulating layer, and a contacting layer arranged on an area of the active layer, the contact layer being adjacent to an area of the guard ring. The device may be produced by a process of three-fold self-alignment, to be precise utilizing a spacer process by means of which a diffusion source having a lateral extension far below the lithography limit is made possible.

Electronic device with guard ring

A semiconductor structure for high frequency operation has a substrate with a doped well formed therein and a buffer layer made of a substrate material covers the well. The buffer layer is made of an undoped material and is disposed on a top side of the well for inhibiting an outdiffusion of a dopant from the well. At least a portion of the substrate is not covered by the buffer layer.

Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure

The magnetic component uses at least two different layers of magnetic material for carrying and amplifying the magnetic flux. The use of two different layers which may, however, have the same material composition allows the magnetic conductors to form a magnetic circuit with a locally matched domain alignment. The magnetic component accordingly allows considerable improvements to be achieved in the component parameter, in particular a considerable increase in the Q-factor.

Magnetic component

A conductor network includes trimming capacitors and is connected in parallel with a resonant circuit. The trimming capacitors can be connected in parallel with the variable-capacitance diodes in the resonant circuit through PIN diodes, enabling trimming of the resonant circuit.

Component having an integrated radiofrequency circuit

A method for producing Schottky diodes having a protective ring in an edge region of a Schottky contact. The protective ring is produced by a protective ring material that is deposited onto a surface of a semiconductor layer, which surface is provided with a patterned masking layer beforehand, and the protective ring material subsequently being siliconized. In this case, the protective ring material constitutes a metal, in particular a high barrier metal, which has, in particular, platinum.

Method for producing Schottky diodes and Schottky diodes

A method for producing a Schottky diode formed of a doped guard ring in an edge area of the Schottky contact is described. The guard ring is produced by depositing a high barrier material, especially made of platinum, on the surface of the semiconductor layer. The surface is provided with a structured masking layer beforehand, and which is subsequently etch-backing.

Method for producing schottky diodes

A Schottky diode assembly includes a Schottky contact formed on a semiconductor substrate and having a semiconductor region of a first conduction type, a metal layer disposed adjacently on the semiconductor region, a protective structure constructed on a peripheral region of the Schottky contact and a doped region in the semiconductor substrate having a second conduction type of opposite polarity from the first conduction type. The doped region extends from a main surface of the semiconductor substrate to a predetermined depth into the semiconductor substrate. The doped region of the protective structure has at least two different first and second doped portions located one below the other relative to the main surface of the semiconductor substrate. The first doped portion is at a greater depth and has a comparatively lesser doping, and the second doped portion has a comparatively higher doping and a slight depth adjacent the main surface of the semiconductor substrate.

Method for producing a Schottky diode assembly formed on a semiconductor substrate

An RF diode, and method for its manufacture, in which a well, doped n-conductive or p-conductive, is formed in a high-ohmic silicon substrate. A silicon epitaxial layer is provided over a first subregion of a surface of the well wherein the layer has the same conductivity type as the doped well. The silicon epitaxial layer is provided with a first Schottky contact layer onto which a first contact metallization is applied. A second subregion located next to the first subregion of the surface of the well is provided with a second Schottky contact layer onto which a second contact metallization is applied.

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Munich, Germany

Hubert Werthmann