Elektroschmelzwerk Kempten Gmbh

Wacker-chemie Gmbh

Hubert Thaler

Lorenz Sigl

Karl A Schwetz

Karl-Alexander Schwetz

Dietrich Lange

Alfred Lipp

Armin Kayser

Jochen Greim

Detlef Steinmann

Michael Fundus

Shaped body based on polycrystalline SiC and having a density of greater than 90% of its theoretical density and an adherent graphite layer on its surface, wherein the graphite layer is crystalline, has a thickness of 0.1-100 &mgr;m and has been produced by thermal surface decomposition of the SiC after it has been sintered to closed porosity.

Graphite-coated shaped body made of sintered silicon carbide

A bearing material of silicon carbide particularly useful for application in the hot water field is provided having improved corrosion resistance under increased thermal stresses wherein the bearing material is characterized by a predominantly course-grained silicon carbide matrix of pressureless sintered silicon carbide having a biamodal grain sized distribution wherein the biomodal grain size distribution is formed by from 50 to 90% by volume of prismatic, tabular, silicon carbide crystallites having a length of from 100 to 1500 .mu.m and from 10 to 50% by volume of prismatic tabular silicon carbide crystallites having a length of from 5 to &lt;100 .mu.m.

Bearing material of silicon carbide

A composite material includes boron carbide and titanium diboride in a volume ratio B.sub.4 C/TiB.sub.2 of from 90:10 to 10:90 parts and a proportion of elemental carbon greater than 2% by weight up to a maximum of 50% by weight, based on the boron carbide content. The composite material has a density greater than 92% TD, a hardness HK 0.1 greater than 2300, a four-point flexural strength greater than 400 MPa and a fracture toughness greater than 3.5 MPa.sqroot.m. The composite material is suitable for producing wear-resistant components or cutting tools.

Composite materials based on boron carbide, titanium diboride and

A process for producing shaped bodies of boron carbide, metal diboride and carbon, which includes

Process for producing bodies based on boron carbide by pressureless

The invention relates to a process for producing green compacts by the slip-casting process, injection-molding process or extrusion process from sinterable mixtures based on a starting powder mixture containing silicon nitride, and, if appropriate, aluminum nitride and/or alumina and other oxides as sinter aids. The dispersant and binder used is a magnesium chloride hydrate as a mixture with magnesium oxide and water and, after molding, the mixtures are hardened at temperatures from 30.degree. to 60.degree. C. In addition, ceramic fibers, such as silicon carbide, can also be processed as fillers. The green compacts thus produced are sufficiently stable, so that they can be worked mechanically.

Process for producing green compacts by molding sinterable ceramic

Polycrystalline sintered bodies are provided consisting of at least 66% by weight of a crystalline Si.sub.3 N.sub.4 phase, of which at least 90% by weight is in the beta-modification, and of up to 34% by weight of secondary intergranular grain boundary phases of oxide, carbide and/or nitride. At least 25% by weight of the secondary grain boundary phases consists of a quasi-ternary crystalline compound in the E.sub.1 --E.sub.2 --E.sub.3 triangle of the Ga.sub.2 O.sub.3 --La.sub.2 O.sub.3 -Al.sub.2 O.sub.3 ternary system called 'Gala', the 'Gala' compound being prepared from gallium oxide, lanthanum oxide and aluminum oxide prior to producing the sintered bodies. The polycrystalline sintered bodies are produced by sintering with and without application of pressure from silicon nitride powders having a portion of impurities not exceeding 4.0% by weight, sintering additives of oxides and optionally other refractory admixtures of carbides and/or nitrides. Powders of a quasi-ternary crystalline compound (Gala compound) are employed as at least one sintering additive prepared, prior to mixing with the remaining components and to sintering, from gallium oxide, lanthanum oxide and aluminum oxide by heating to temperatures from 1500.degree. C. to 1850.degree. C. When using at least 70% by weight of silicon nitride powder, there can be used up to 30% by weight of a crystalline 'Gala' compound alone or mixed with other admixtures of oxides, carbides or nitrides, but altogether at least 1% by weight of a crystalline 'Gala' compound must be present. The sintered bodies are especially tough and very hard and can be used for the machining of iron materials at high cutting speeds.

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Kempten, Germany

Hubert Thaler