Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

S.o.i.tec Silicon on Insulator Technologies

Commissariat À L'energie Atomique (Cea)

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Soitec

Other

Centre National De La Recherche Scientifique

Stmicroelectronics S.a.

S.o.i. Tec Silicon on Insulator Technologies of Chemin Des Franques

Hubert Moriceau

Bernard Aspar

Christophe Morales

Franck Fournel

Marc Zussy

Frank Fournel

Christophe Maleville

Michel Bruel

Olivier Rayssac

Bruno Ghyselen

Fabrice Letertre

Bruno Imbert

Chrystel Deguet

Eric Jalaguier

Maxime Argoud

Pierre Mur

Cécile Aulnette

Francois Rieutord

Benoit Bataillou

Carlos Mazure

Bernard Ferrand

Thomas Signamarcheix

Chrystelle Lagahe-Blanchard

Paul Gondcharton

Stephane Pocas

Jacques Daval

Shay Reboh

Jean-Marc Fedeli

Yves Morand

Sébastien Kerdiles

Emmanuel Augendre

Laurent Clavelier

Lamine Benaissa

Thierry Barge

Emmanuel Defay

Yannick Le Tiec

Thomas Ernst

Sergio Nicoletti

Takeshi Akatsu

Lea Di Cioccio

Norbert Moussy

Thierry Baron

Mickaël Brun

Matthew Charles

Frédéric Mazen

Ludovic Poupinet

Frederic Mazen

Guy Feuillet

Joël Eymery

Marek Kostrzewa

Pierre-Jean Ribeyron

Corinne Maunand Tussot

Sèbastien Kerdiles

Xavier Blot

Patrick Leduc

Christophe Constancias

Léa Di Cioccio

Chrystelle Lagahe

François Rieutord

Fran&ccedil;ois Martin

Loic Sanchez

Salim Mimouni

Marie-Francoise Armand

Alain Soubie

Jérôme Dechamp

Jacques Margail

Pierre Perreau

Noël Magnea

Marie-No&euml;lle Semeria

Maurice Couchaud

Marie-Helene Vaudaine

Christelle Lagahe-Blanchard

Didier Challeton

Jean-Francois Michaud

Thierry Chevolleau

Mathieu Pijolat

Christelle Lagahe

Benjamin Scarfogliere

Philippe Montmayeul

Christian Fretigny

Stéphane Pocas

François Martin

Remi Beneyton

Bernard Dalzotto

Philippe Michallon

Valerie Pouteau

Laure Libralesso

Caroline Ventosa

Jean-Luc Deschanvres

Anne-Laure Joudrier

Anne-Marie Charvet

Jean-Claude Roussin

Phillippe Montmayeul

Benoĩt Bataillou

Beryl Blondeau

Benoît Bataillou

Anne-Marie Cartier

Hubert Eymery

No&euml;l Magnea

Caroline Rauer

A method is provided, including successive steps of a) providing a donor substrate covered with a layer of oxide; b) implanting gaseous species in the donor substrate, through the layer to form an embrittlement zone, and at the end of step b), the layer has an absorbance peak with a maximum at a first wavenumber, and with a full width at half maximum; c) applying ultraviolet radiation to the free surface of the layer under an ozone atmosphere and according to a thermal budget for: shifting the maximum by at least 3 cmtowards increasing wavenumbers, reducing the full width at half maximum by at least 3 cm, and allowing direct adhesion with the free surface; d) assembling the donor substrate on the supporting substrate by direct adhesion with the free surface; and e) splitting the donor substrate along the embrittlement zone to expose a useful layer.

Method for transferring a useful layer

This method comprises the successive steps of providing a donor substrate comprising a first surface; smoothing the first surface of the donor substrate until a reconstructed surface topology is obtained; forming a first dielectric film on the smoothed first surface of the donor substrate, in such a way that the first dielectric film has a surface that preserves the reconstructed surface topology; implanting gaseous species in the donor substrate, through the first dielectric film, so as to form an embrittlement zone, the useful layer being delimited by the embrittlement zone and by the first surface of the donor substrate; assembling the donor substrate on the supporting substrate by direct adhesion; and splitting the donor substrate along the embrittlement zone so as to expose the useful layer.

Method for transfer of a useful layer

The present invention relates to the controlling of the deposition quality of an epitaxial layer, for example of gallium nitride, on a growth plate, for example of silicon, in particular at the level of the edges of the plate. The invention aims, in particular, to reduce the complexity and the production cost of known solutions. The production method according to the invention highlights the existence of a chamfer on each growth plate and provides a self-positioned deposition of a protective film on at least one part of the chamfer using a mechanical mask, preventing the deposition of the protective film on the useful zone Zu through epitaxy.

Method for producing an epitaxial layer on a growth plate

A manufacturing method including supplying a first substrate including a first face designated front face, the front face being made of a III-V type semiconductor, supplying a second substrate, forming a radical oxide layer on the front face of the first substrate by executing a radical oxidation, assembling, by a step of direct bonding, the first substrate and the second substrate so as to form an assembly including the radical oxide layer intercalated between the first and second substrates, executing a heat treatment intended to reinforce the assembly interface, and making disappear, at least partially, the radical oxide layer.

Method for direct bonding of III-V semiconductor substrates with a radical oxide layer

A method for direct bonding between at least a first and a second substrate, each of the first and second substrates containing a first and a second main surface, the method including: a first thinning of the edges of the first substrate over at least one portion of the circumference of the first substrate, at the first main surface of the first substrate; and placing the second main surface of the first substrate in contact with the second main surface of the second substrate such that a bonding wave propagates between the first and second substrates, securing the first and second substrates to one another by direct bonding such that portions of the second main surface of the first substrate located below the thinned portions of the first main surface of the first substrate are secured to the second substrate.

Method for direct bonding of substrates including thinning of the edges of at least one of the two substrates

A method for assembling a first substrate and a second substrate by metal-metal direct bonding, includes providing a first layer of a metal at the surface of the first substrate and a second layer of the metal at the surface of the second substrate, the first and second metal layers having a tensile stress (&#x3c3;) between 30% and 100% of the tensile yield strength (&#x3c3;) of the metal; assembling the first and second substrates at a bonding interface by directly contacting the first and second tensile stressed metal layers; and subjecting the assembly of the first and second substrates to a stabilization annealing at a temperature lower than or equal to a temperature threshold beyond which the first and second tensile stressed metal layers are plastically compressively deformed.

Metal-metal direct bonding method

The invention concerns an assembly method comprising the following steps: a) providing a first substrate comprising a first face made from crystalline indium phosphide, b) providing a second substrate comprising a second crystalline face different from the indium phosphide, c) forming an intermediate layer of crystalline indium phosphide on the second face of the second substrate, d) forming an assembly, via a direct bonding step, by bringing the first face of the first substrate into contact with the intermediate layer, the direct bonding step being carried out in an atmosphere having a pressure greater than 10&#x2212;4 Pa, and preferably higher than 10&#x2212;3 Pa, e) subjecting the assembly formed in step d) to heat treatment.

Method for assembling substrates by bonding indium phosphate surfaces

A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.

Photovoltaic cell, including a crystalline silicon oxide passivation thin film, and method for producing same

A method for recycling a substrate holder adapted to receive a substrate for at least one deposition step of a layer of a material on the substrate also leading to the depositing of a layer of a material on the substrate holder, the method including implanting ion species through a receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder, exfoliating the thin film from the substrate holder so as to break up the thin film, and removing a stack including at least one layer of a material deposited on the thin film resulting from the at least one deposition step of the layer of a material on the substrate.

Method for recycling a substrate holder

This method includes steps a) providing the first structure and second structure, the first structure including a surface on which a silicon layer is formed; b) bombarding the silicon layer by a beam (F) of species configured to reach the surface of the first structure, and to preserve a part of the silicon layer with a surface roughness of less than 1 nm RMS on completion of the bombardment; c) bonding the first structure and second structure by direct bonding between the part of the silicon layer preserved in step b) and the second structure, steps b) and c) being executed in the same chamber subjected to a vacuum of less than 10mbar.

Method for performing direct bonding between two structures

A method for producing a structure by direct bonding of two elements, the method including: production of the elements to be assembled and assembly of the elements. The production of the elements to be assembled includes: deposition on a substrate of a TiN layer by physical vapor deposition, and deposition of a copper layer on the TiN layer. The assembly of the elements includes: polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, bringing the surfaces into contact, and storing the structure at atmospheric pressure and at ambient temperature.

Process for producing a structure by assembling at least two elements by direct adhesive bonding

A method is provided for producing a microelectronic device provided with different strained areas in a superficial layer of a semi-conductor on insulator type substrate, including amorphizing a region of the superficial layer and then a lateral recrystallization of the region from crystalline areas adjoining the region.

Method for producing a strained semiconductor on insulator substrate

A method for thinning samples including the steps of: a) providing at least one sample having a front and a rear face, b) providing a frame substrate having a first face and a second face opposite the first, including a through-opening which opens into the first and second face, which is configured to receive the sample, c) positioning the sample so it is disposed in the through-opening, the front face being oriented to the same side as the first face, and d) thinning the frame substrate and the sample simultaneously from the first face and the front face, respectively, so that at the end of thinning, the faces extend substantially in the same plane, the thinning being carried out using a grinder, the frame substrate and the sample being disposed on a rotary disk held in place by aspiration, the flanks of the sample remaining free during the thinning.

Method for thinning samples

A method for manufacturing a flexible structure including implanting ionic species in first and second source substrates so as to form first and second embrittlement regions respectively, delimiting first and second thin films, providing a flexible substrate, the stiffness R of which is less than or equal to 10GPa&#xb7;&#x3bc;m, securing the first and second thin films to the first and second faces of the flexible substrate respectively so as to form a stack including the flexible structure delimited by the first and second embrittlement regions, the flexible structure having a stiffening effect suitable for allowing transfers of the first and second thin films, and applying a thermal budget so as to transfer the first and second thin films onto the flexible substrate.

Manufacturing a flexible structure by transfers of layers

A method for obtaining a film made out of a first material on a polymer support, said method comprising bonding a first wafer to a second wafer, thereby defining a bonding interface between said first wafer and said second wafer, at least one of said first and second wafers comprising a layer of said first material situated in proximity to said bonding interface, in said first wafer, hollowing out a cavity, said cavity comprising a bottom parallel to said bonding interface that defines, in said first wafer, a bottom zone at a controlled distance relative to said second wafer, forming, in said cavity, a polymer layer on a thickness controlled from a bottom thereof to obtain a combined wafer portion, said combined wafer portion comprising a bottom zone formed by said polymer layer on said bottom and a peripheral zone, and eliminating said second wafer on a major portion of a thickness thereof, thereby releasing, beneath said polymer layer, a film comprising said layer of said first material.

Method of fabricating polymer film in the cavity of a wafer

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Saint-Egreve, France

Hubert Moriceau