Infineon Technologies Ag

Infineon Technologies Austria Ag

Hubert Maier

Thomas Detzel

Markus Zundel

Manfred Engelhardt

Gudrun Stranzl

Uwe Hoeckele

Juergen Steinbrenner

Markus Kahn

Stefan Woehlert

Herbert Gietler

Sven Lanzerstorfer

Kurt Matoy

Johann Rieger

Helmut Schoenherr

Kai-Alexander Schreiber

Christian Krenn

Nicola Vannucci

Stefan Lipp

Hans Peter Zeindl

Elfriede Kraxner Wellenzohn

Silvana Fister

Christoph Brunner

A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.

Passivation layer and method of making a passivation layer

A method for processing a wafer including a plurality of chips is provided. The method may include: forming a trench in the wafer between the plurality of chips; forming a diffusion barrier layer at least over the sidewalls of the trench; forming encapsulation material over the plurality of chips and in the trench; and singularizing the plurality of chips from a side opposite the encapsulation material.

Method for processing wafer

Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated substrate is completely separated into a plurality of parts.

Separation of chips on a substrate

An arrangement is employed in a semiconductor device having a semiconductor body, the semiconductor body having a surface. The arrangement includes a surface portion on which a first metallization layer is arranged, and an alignment pattern arranged between the surface portion and the first metallization layer.

Method for producing bonding connection of semiconductor device

An integrated circuit including a semiconductor arrangement, a power semiconductor component and an associated production method is disclosed. One embodiment includes a carrier substrate, a first interconnect layer, formed on the carrier substrate and has at least one cutout, an insulating filling layer, formed on the first interconnect layer and the carrier substrate and fills at least one cutout, an SiON layer, formed on the filling layer, and a second interconnect layer, formed over the SiON layer.

Integrated circuit having a semiconductor arrangement

The method of forming a semiconductor structure in a substrate comprises, forming a first trench with a first width Wand a second trench with a second width W, wherein the first width Wis larger than the second width W, depositing a protection material, lining the first trench, covering the substrate surface and filling the second trench and removing partially the protection material, wherein a lower portion of the second trench remains filled with the protection material.

Method of forming a semiconductor structure comprising insulating layers with different thicknesses

Methods for forming an integrated semiconductor circuit arrangement are disclosed. In one embodiment, a semiconductor circuit with a first semiconductor circuit region and with a second semiconductor circuit region is formed in each case in a semiconductor material region. A first metallization layer is applied to the structure thus obtained. A protective material region is then formed. A second metallization layer is subsequently applied, which is then also patterned. Afterward, the first metallization layer together with the protective material region is then patterned.

Method for forming an integrated semiconductor circuit arrangement

A field-effect-controllable semiconductor component and a method for fabricating an electrode of the component includes a semiconductor body having a first zone of a first conduction type, a second zone of a second conduction type disposed above the first zone, and at least one trench extending into the semiconductor body in a vertical direction through the second zone, applying a first insulation layer at least in a region of the second zone in the trench, applying a first layer of electrode material to the semiconductor body, applying an intermediate layer to the first layer, applying a second layer of electrode material to the intermediate layer, removing a portion of the second layer and of the intermediate layer to leave the intermediate layer and the second layer at least partly in the trench, and patterning the first layer.

Method for producing an electrode by means of a field effect controllable semiconductor component and field-effect-controllable semiconductor component

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Villach, Austria

Hubert Maier