Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Ams-osram International Gmbh

Hubert Halbritter

Peter Brick

Thomas Schwarz

Frank Singer

Martin Rudolf Behringer

Laura Kreiner

Roland Enzmann

Jean-Jacques Drolet

Mikko Perälä

Andreas Wojcik

Jens Richter

Bruno Jentzsch

Thorsten Frank Baumheinrich

Roland Heinrich Enzmann

Kilian Regau

Tilman Ruegheimer

Ann Russell

Britta Göötz

Ines Pietzonka

Hoa Vu

Paul Ta

Julia Stolz

Georg Rossbach

Patrick Hoerner

Josip Maric

Christopher Soell

Kanishk Chand

Jong Park

Georg Bogner

Matthias Sabathil

Erwin Lang

Stefan Groetsch

Andreas Ploessl

Andreas Dobner

Simon Schwalenberg

Roland Schulz

Christopher Wiesmann

Bernd Boehm

Georg Roßbach

Tilman Rügheimer

Peter Fuchs

Michael Klein

Andreas Fröhlich

Siegfried Herrmann

Stefan Illek

Alexander F Pfeuffer

Karl Engl

Jörg Erich Sorg

Karsten Diekmann

Marc Philippens

Bernhard Stojetz

David J O'Brien

Andreas Biebersdorf

Petrus Sundgren

Britta Goeoetz

Adrian Stefan Avramescu

Christoph Klemp

Sebastian Wittmann

Matthias Sperl

Joerg Sorg

Michael Wittmann

Uli Hiller

Alvaro Gomez-Iglesias

Désirée Queren

Martin Haushalter

Michael Brandl

Juergen Moosburger

Karsten Auen

Andreas Plößl

Christian Lauer

Frank Möllmer

Heinz Haas

Claus Jaeger

Martin Müller

Christine Rafael

Markus Bröll

Andreas Leber

Markus Arzberger

Stephan Haslbeck

Felix Feix

Andreas Rudolph

Ana Kanevce

Christian Berger

Xue Wang

Nicole Heitzer

Christoph Goeltner

Michael Schwind

Stefan Brandl

Tim Böscke

Dirk Sossenheimer

Patrick Hörner

Dennis Sprenger

Klaus Flock

Marie Assmann

Mario Wiengarten

Mikko Peraelae

Markus Lermer

Markus Foerste

Christoph Rupprich

Thomas Hager

A semiconductor laser includes a horizontal laser element including a first semiconductor layer arrangement having a first active zone for generating radiation. The horizontal laser element furthermore includes a first optical resonator extending in a direction parallel to a first main surface of the first semiconductor layer arrangement. Lateral boundaries of the first semiconductor layer arrangement run obliquely, such that electromagnetic radiation generated is reflectable in a direction of the first main surface of the first semiconductor layer arrangement. The semiconductor laser furthermore includes a vertical laser element having a second optical resonator extending in a direction perpendicular to the first main surface of the first semiconductor layer arrangement. The vertical laser element is arranged above the first semiconductor layer arrangement on the side of the first main surface in a beam path of electromagnetic radiation reflected at one of the lateral boundaries of the first semiconductor layer arrangement ().

Semiconductor laser with a horizontal laser element and a vertical laser element, lidar system and production method

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

A laser source may include a laser diode, a modulation device, and a feedback device. The modulation device may include an electric power source and may be suitable for modifying a current intensity applied to the laser diode, which may modify an emission frequency of the laser diode. The feedback device may be suitable for modifying a current intensity applied to the laser diode by the electric power source as a function of the electromagnetic radiation emitted by the laser diode.

Laser source, LIDAR system and method for controlling a laser source

Disclosed is a method for producing a radiation-emitting semiconductor chip including the steps: —providing a semiconductor layer sequence having an active region which is designed for generating electromagnetic radiation, —producing a first recess in the semiconductor layer sequence, which fully penetrates the active region, —producing a first structure in the first recess, wherein—at least a lateral surface of the first structure facing the active region extends obliquely to at least a first lateral surface of the semiconductor layer sequence, and—the first structure is spaced apart in lateral directions from the active region. Also disclosed is a radiation-emitting semiconductor chip.

Method for producing a radiation-emitting semiconductor chip, and radiation-emitting semiconductor chip

The invention relates to a semiconductor laser comprising a semiconductor layer arrangement, having an active zone for radiation generation, as well as comprising a first resonator mirror, a second resonator mirror and a resonator arranged between the first and the second resonator mirror, which ends in a direction parallel to a main surface of the semiconductor layer arrangement. The semiconductor laser also comprises a first wavelength-selective absorption element which is arranged between the semiconductor layer arrangement and the first resonator mirror.

Semiconductor laser and lidar system comprising the semiconductor laser

A composite component, a device, and method for producing the composite component including a plurality of optical components, a removable sacrificial layer, a retaining structure and a common intermediate carrier are provided, wherein the optical components each have an optical element for shaping a light beam and the sacrificial layer is arranged in the vertical direction at least in places between the intermediate carrier and the optical components. The retaining structure includes retaining elements, wherein the retaining structure and the sacrificial layer form a mechanical connection between the intermediate carrier and the optical components. The optical components are mechanically connected to the intermediate carrier only via the retaining structure, wherein the retaining elements are formed in such a way that under mechanical load they release the optical components so that the optical components are formed to be detachable from the intermediate carrier and thus transferable.

Composite component made of optical components, method for producing a composite component and device comprising an optical component

According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance Rof the first resonator mirror is wavelength-dependent, so that Ror a product R of Rand the reflectance Rof the second resonator mirror in a wavelength range decreases from a target wavelength λof the laser to λ+Δλ from a value R, wherein Δλ is selected as a function of a temperature-dependent shift in an emission wavelength.

Semiconductor laser and LIDAR system and also laser system with the semiconductor laser

An optoelectronic device, in particular a display device, comprises: at least one optoelectronic light source, an at least partially transparent front layer, an at least partially transparent support layer, wherein the light source is arranged between the front layer and the support layer, wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer, and wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light, in particular at an interface between the front layer and the outside, is avoided or at least reduced.

Optoelectronic device

μ-led, μ-led device, display and method for the same

The invention relates to various aspects of an optoelectronic component or an arrangement comprising such a component for various applications, in particular in the automotive sector and for visual displays. The arrangements are characterized by simple manufacture and fast switching times.

Optoelectronic component, optoelectronic arrangement and method

A picture element for a display device includes a first and a second supply connection, a light-emitting semiconductor device arranged between the first and the second supply terminal, and a comparison unit having a first and a second input and an output. The comparison unit is configured to adjust a voltage at the output in dependence on a comparison of a voltage applied to the first input and a voltage applied to the second input. The picture element also includes a supply switch-configured to control a current flow between the first and the second supply terminal via the light-emitting semiconductor device depending on the voltage applied at the output of the comparison unit. The picture element further includes a selection input, a data input, a memory element and a control switch.

Picture element for a display device and display device

In an embodiment an apparatus includes at least one optoelectronic laser configured to provide excitation radiation to a sample, the excitation radiation being generated by an electric current flowing through the at least one optoelectronic laser, a transistor configured to modulate the electric current flowing through the at least one optoelectronic laser in order to switch on and off generation of the excitation radiation and a spectrometer configured to analyze Raman light scattered from the sample in response to exposing the sample to the excitation radiation, wherein the Raman light includes one or more spectral components, wherein the spectrometer includes a diffraction element configured to split the Raman light into the spectral components, and wherein the diffraction element includes at least a photonic crystal or a plasmonic Fabry Perot filter.

Apparatus, a handheld electronic device, and a method for carrying out Raman spectroscopy

A laser device comprises a carrier, an optoelectronic component provided on the carrier, said component being designed to emit laser radiation, and an optical element designed to form the laser radiation emitted by the optoelectronic component, wherein: the optical element has a first layer that is at least partially transparent to the laser radiation, with a first refractive index, and a second layer that is at least partially transparent to the laser radiation, with a second refractive index; the first layer being applied to the optoelectronic component and having a surface with an imprinted structure; and the second layer is applied to the first layer, on the surface () having the imprinted structure.

Laser device and method for manufacturing a laser device

Growing community of inventors

Dietfurt, Germany

Hubert Halbritter