Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Hubert Grange

Michel Borel

Philippe Robert

Bernard Diem

Robert Meyer

Gilles Delapierre

Patrice Rey

Jean-Sébastien Danel

Vincent Jousseaume

Frédéric-Xavier Gaillard

France Michel

Brigitte Desloges

Murielle Moreau

Sylvie Viollet Bosson

Muriel Moreau

Catherine Maeder

The invention relates to a humidity sensor including, as a humidity absorbent layer, a polymer layer including a blend including a first polyamide and a second polyamide, where the said second polyamide includes, in its repetitive units, a number of carbon atoms greater than that of the repetitive units of the first polyamide.

Moisture sensor including, as a moisture-absorbing layer, a polymer layer including a mixture of polyamides

A humidity sensor of capacitive type, a device for detecting or measuring humidity including the sensor, and a method to fabricate the sensor. The humidity sensor includes at least one nanoporous dielectric material positioned between at least one first electrode of a capacitor and at least one second electrode of the capacitor.

Capacitive humidity detector with nanoporous hydrophilic dielectric

A device for measuring deformation including: a) at least one strain gauge, producing a signal following a deformation, positioned on a face of a flexible support favoring elongation of the strain gauge, the face opposite the strain gauge of the flexible support, which is configured to be brought into contact with, or glued to, a test body with the deformation desired to be measured; b) at least one first substrate, including at least signal processor and/or signal transmission device; c) a securing mechanism to assemble the strain gauge and the first substrate mechanically, including an elastic layer of material having elastic properties positioned between the gauge and the first substrate, the elastic layer preventing deformation of the gauge from being transmitted, or be transmitted as little as possible, to the first substrate.

Stress sensor and its manufacturing method

A pressure sensor micromachined by using microelectronics technologies includes a cavity hermetically sealed on one side by a silicon substrate and on the other side by a diaphragm that is configured to be formed under the effect of the pressure outside the cavity. The sensor includes at least one resistance strain gage fastened to the diaphragm and has resistance that varies as a function of the deformation of the diaphragm. The diaphragm is fastened to the resistance strain gages. The gages are located inside the sealed cavity. The diaphragm has an insulting layer deposited on a sacrificial layer and may cover integrated measurement circuits in the silicon substrate.

Pressure sensor with resistance strain gages

A cavity is etched in a substrate and opens out onto the surface of the substrate facing the suspended element (). The cavity has at least one broader zone having a cross-section which is greater than the cross-section of the cavity at said surface. A base () of the pillar (), of complementary shape to the cavity, is buried in the cavity. The base () of the pillar () can form a dovetail assembly with the cavity of the substrate. This assembly is obtained by deposition, on a surface of the substrate, of a sacrificial layer and etching, in the sacrificial layer, of a hole passing through the sacrificial layer and reaching the surface of the substrate. The substrate is then etched, in the extension of the hole, so as to form the cavity of the substrate. Then a material designed to form the pillar () is deposited in the cavity and on the walls of the hole.

Micro-mechanical device comprising suspended element which is connected to a support by means of a pier and producing method thereof

A useful layer () is initially attached by a sacrificial layer () to a layer () forming a substrate. Before etching of the sacrificial layer (), at least a part of the surface () of at least one of the layers in contact with the sacrificial layer () is doped. After etching of the sacrificial layer (), the surface () is superficially etched so as to increase the roughness of its doped part. After doping, a mask () is deposited on a part of the useful layer () so as to delineate a doped zone and a non-doped zone of the surface (), one of the zones forming a stop after the superficial etching phase.

Method for separating a useful layer and component obtained by said method

A process for making at least one suspended element uses an etching technique for micro-machining a structure comprising a substrate covered in sequence by a first layer called a stop layer made of a first material, and a second layer made of a second material in which the suspended element is formed. The process uses a dry etching technique using a gas with sufficient selectivity to enable etching of the second layer without etching the stop layer, under conditions defined to enable anisotropic etching of the second material, the etching being carried out according to a first phase to delimit the suspended element as far as the level of the stop layer and being continued in a second phase during which the suspended element is released by etching of the surface layer of the suspended element delimited in the first phase and which is adjacent to the stop layer.

Method for producing a suspended element in a micro-machined structure

Strain gauge on a flexible support and transducer equipped with said

Electrolytic device for light display on a dark background comprising a light source which illuminates a cell formed by two insulating walls between which is an electrolyte. One wall has an electrode comprising a plurality of segments for display and the other wall has a counter-electrode. The display is obtained by electrochemical deposition of dark coating material on the electrode.

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Grenoble, France

Hubert Grange