Nxp Usa, Inc.

Freescale Semiconductor,inc.

Semiconductor Components Industries, LLC

Hubert Grandry

Laurent Guillot

Edouard D De Fresart

Philippe Dupuy

Philippe Perruchoud

Evgueniy Stafanov

A half-bridge circuit comprises a high supply contact and a low supply contact. A half-bridge output contact is connectable to drive a load and has a high-side between the high supply contact and the half-bridge output contact and a low-side between the half-bridge output contact and the low supply contact. A high-side bidirectional vertical power transistor at the high-side has a source connected to the high supply contact, and a low-side bidirectional vertical power transistor at the low-side, transistor has a source connected to the low supply contact. The high-side bidirectional vertical power transistor and low-side bidirectional vertical power transistor are connected in cascode and share a common drain connected to the half-bridge output contact, and are controllable to alternatingly allow a current flow from the high supply contact to the half-bridge output contact or from the half-bridge output contact to the low supply contact.

Half-bridge circuit, H-bridge circuit and electronic system

A semiconductor product comprising: a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a third semiconductor electrode; a first switch, between the first semiconductor electrode and the third semiconductor electrode, provided by a first vertical insulated-gate field-effect-transistor; and a second switch, between the second semiconductor electrode and the third semiconductor electrode, provided by a second vertical insulated-gate field-effect-transistor, wherein the interconnecting semiconductor electrode interconnects the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor.

Semiconductor device wtih an interconnecting semiconductor electrode between first and second semiconductor electrodes and method of manufacture therefor

An integrated circuit comprises a transistor body control circuit for controlling a body of a bidirectional power transistor. The transistor body control circuit comprises switches connected between a body terminal and a first current terminal, with a control terminal for controlling the current flowing through the switch. The control terminal of the switch is connected to alternating current, AC capacitive voltage divider. The AC capacitive voltage dividers are connected to the control terminals and arranged to control the switches to switch the voltage of the body terminal as a function of the voltage between the first current terminal and the second current terminal. The integrated circuit further comprises a bi-directional power transistor connected to the transistor body control circuit.

Transistor body control circuit and an integrated circuit

In one embodiment, a current sense circuit is formed with a pair of series connected switches that are used to steer a load current and form a current sense signal.

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Espanes, France

Hubert Grandry