Robert Boschgmbh

Endress + Hauser Gmbh + Co.

Paragon

Hubert Benzel

Frank Schaefer

Christoph Schelling

Heribert Weber

Simon Armbruster

Hans Artmann

Gerhard Lammel

Joerg Brasas

Joerg Muchow

Matthias Illing

Torsten Kramer

Stefan Pinter

Stefan Finkbeiner

Marcus Ahles

Roland Guenschel

Ando Feyh

Frieder Haag

Thorsten Pannek

Gregor Schuermann

Kathrin Knese

Franz Laermer

Kurt Weiblen

Silvia Kronmueller

Tjalf Pirk

Ralf Reichenbach

Julian Gonska

Frank Henning

Paul Farber

Karl-Heinz Kraft

Frank Schaeffer

Matthias Boehringer

Frank Schäfer

Armin Scharping

Jochen Reinmuth

Johannes Classen

Frank Fischer

Helmut Grutzeck

Jens Frey

Jochen Franz

Heiko Stahl

Hans-Peter Trah

Frederic Njikam Njimonzie

Volkmar Senz

Arnim Hoechst

Masoud Habibi

Gilbert Moersch

Lutz Mueller

Joachim Fritz

Andreas Duell

Joerg Schaepperle

Christoph Friese

Michael Bauer

Daniel Meisel

Ernst Luder

Jan Gebauer

Matthias Fuertsch

Harald Guenschel

Michael Krueger

Traugott Kallfass

Robert Sattler

Heinz-Georg Vossenberg

Kurt Ingrisch

Christian Krummel

Michaela Mitschke

Regina Grote

Karl Bender

Markus Lang

Armin Grundmann

Botho Ziegenbein

Holger Ross

Simon Ambruster

Roman Sellin

A sensor unit including a first semiconductor component and a second semiconductor component, the first semiconductor component including a first substrate and a sensor structure. The second semiconductor component includes a second substrate, the first and second semiconductor components being connected to each other with the aid of a wafer connection, the sensor unit having a decoupling structure, which is configured in such a way that the sensor structure is decoupled thermally and/or mechanically from the second semiconductor component.

Sensor unit including a decoupling structure and manufacturing method therefor

A micromechanical sensor system includes a micromechanical sensor chip surrounded at least laterally by a molded housing which has a front side and a rear side. The micromechanical sensor chip includes a chip area on the rear side, which is omitted from the molded housing, and a rewiring device formed on the rear side, which, starting from the chip area, extends to the surrounding molded housing on the rear side, and from there, past at least one via from the rear side to the front side of the molded housing.

Micromechanical sensor system and corresponding manufacturing method

A sensor includes a body having a sensor surface and an oblique surface. A sensor element is arranged on the sensor surface and configured to pick up a direction component of a directional measurement variable. At least one contact-making surface configured to make contact with the sensor element is arranged on the oblique surface. The oblique surface is at an angle with respect to a lattice structure of carrier material of the sensor and is oriented in a different direction than the sensor surface.

Sensor, method for producing a sensor and method for mounting a sensor

An integrated diode array and a corresponding manufacturing method are provided. The integrated diode array includes a substrate having an upper side, and a plurality of blocks of several diodes, which are positioned in a planar manner and are suspended at the substrate above a cavity situated below them in the substrate. The blocks are separated from one another by respective gaps, and within a specific block, the individual diodes are electrically insulated from one another by first STI trenches situated between them.

Integrated diode array and corresponding manufacturing method

A component having a via includes: (i) a first layer having a first via portion, a first trench structure, and a first surrounding layer portion, the first via portion being separated by the first trench structure from the first surrounding layer portion; (ii) a second layer having a second via portion, a second trench structure, and a second surrounding layer portion, the second via portion being separated by the second trench structure from the second surrounding layer portion; (iii) an insulation layer disposed between the first and the second layer, the insulation layer having an opening so that the first and the second via portions of the first and the second layers are directly connected to one another in the region of the opening. The first via portion and the second surrounding layer portion at least partially overlap.

Component having a via

A micromechanical component including a first composite of a plurality of semiconductor chips, the first composite having a first front and back surfaces, a second composite of a corresponding plurality of carrier substrates, the second composite having a second front and back surfaces; wherein the first front surface and the second front surface are connected via a structured adhesion promoter layer in such a way that each semiconductor chip is connected, essentially free of cavities, to a corresponding carrier substrate corresponding to a respective micromechanical component.

Manufacturing method for a micromechanical component, corresponding composite component, and corresponding micromechanical component

In a micromechanical component having an inclined structure and a corresponding manufacturing method, the component includes a substrate having a surface; a first anchor, which is provided on the surface of the substrate and which extends away from the substrate; and at least one cantilever, which is provided on a lateral surface of the anchor, and which points at an inclination away from the anchor.

Micromechanical component having an inclined structure and corresponding manufacturing method

A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer.

Method for producing a semiconductor component and a semiconductor component produced according to the method

An electrically insulating sheathing for a piezoresistor and a semiconductor material are provided such that the piezoresistor is able to be used in the high temperature range, e.g., for measurements at higher ambient temperatures than 200&#xb0; C. A doped resistance area is initially laterally delineated by at least one circumferential essentially vertical trench and is undercut by etching over the entire area. An electrically insulating layer is then created on the wall of the trench and the undercut area, so that the resistance area is electrically insulated from the adjacent semiconductor material by the electrically insulating layer.

Method for creating monocrystalline piezoresistors

A sensor, in particular for the spatially resolved detection, includes a substrate, at least one micropatterned sensor element having an electric characteristic whose value varies as a function of the temperature, and at least one diaphragm above a cavity, the sensor element being disposed on the underside of the at least one diaphragm, and the sensor element being contacted via connecting lines, which extend within, on top of or underneath the diaphragm. In particular, a plurality of sensor elements may be formed as diode pixels within a monocrystalline layer formed by epitaxy. Suspension springs, which accommodate the individual sensor elements in elastic and insulating fashion, may be formed within the diaphragm.

Sensor and method for its production

A method for producing a component having at least one diaphragm formed in the upper surface of the component, which diaphragm spans a cavity, and having at least one access opening to the cavity from the back side of the component, at least one first diaphragm layer and the cavity being produced in a monolithic semiconductor substrate from the upper surface of the component, and the access opening being produced in a temporally limited etching step from the back side of the substrate. The access opening is placed in a region in which the substrate material comes up to the first diaphragm layer. The etching process for producing the access opening includes at least one anisotropic etching step and at least one isotropic etching step, in the anisotropic etching step, an etching channel from the back side of the substrate being produced, which terminates beneath the first diaphragm layer in the vicinity of the cavity, and at least the end region of this etching channel being expanded in the isotropic etching step until the etching channel is connected to the cavity.

Method for producing a component, and sensor element

A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.

Method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate

A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000&#xb0; C. and ca. 1400&#xb0; C., in order to close the generated pores again and to enclose the filling material.

Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type

The present invention describes a method for producing a micromechanical capacitive pressure transducer and a micromechanical component produced by this method. First, a first electrode is produced in a doped semiconductor substrate. In a further method step, a diaphragm with a second electrode is produced at the surface of the semiconductor substrate. Furthermore, it is provided to apply a first layer, which preferably is made of dielectric material, on the diaphragm and the semiconductor substrate. With the aid of this first layer, the diaphragm and the semiconductor substrate of the finished micromechanical capacitive pressure transducer are mechanically connected to one another directly or indirectly. Furthermore, a buried cavity is produced in the semiconductor substrate between the first and second electrode. In a following etching step, the diaphragm is finally dissolved out of the semiconductor substrate through openings in the first layer, the mechanical connection from the diaphragm to the semiconductor substrate being accomplished with the aid of the first layer. Due to this mechanical connection the diaphragm or the second electrode is able to be movably suspended above the first electrode.

Micromechanical capacitive pressure transducer and production method

A sensor system, e.g., a pressure sensor system, includes a substrate having at least one trench on a first side. The trench is provided for forming a first diaphragm region on a second side opposite from the first side. In addition, a second diaphragm region and a cavern are integrated into the material of the first diaphragm region.

Sensor system, method for operating a sensor system, and method for manufacturing a sensor system

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Pliezhausen, Germany

Hubert Benzel