Rohm & Haas Electronic Materials LLC

Harvard College

Huazhi Li

Deodatta Vinayak Shenai-Khatkhate

Qing Min Wang

Roy Gerald Gordon

Jean-Sebastien Lehn

Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.

Organometallic compounds

Methods of forming metal-containing layers are provided where heteroleptic organometallic compounds containing at least one formamidinate ligand are conveyed in a gaseous form to a reactor; and films comprising a metal are deposited on a substrate. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.

Method of forming metal-containing layer using organometallic compounds

Metal(IV) tetrakis(N,N'-dialkylamidinates) were synthesized and characterized. Exemplary metals include hafnium, zirconium, tantalum, niobium, tungsten, molybdenum, tin and uranium. These compounds are volatile, highly stable thermally, and suitable for vapor deposition of metals and their oxides, nitrides and other compounds.

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Somerville, MA, United States of America

Huazhi Li