Future Wei Technologies, Inc.

Huawei Technologies Co., Limited

Huapu Pan

Hongmin Chen

Li Ping Yang

Xiao Andy Shen

Zongrong Liu

Qianfan Xu

Dawei Zheng

Hongzhen Wei

Yu Sheng Bai

Xueyan Zheng

Li Yang

An edge coupling device including a substrate, a buried oxide disposed over the substrate, a cladding material disposed over the buried oxide, where the cladding material includes a trench, an inversely tapered silicon waveguide disposed within the cladding material beneath the trench, and a ridge waveguide disposed within the trench, where the ridge waveguide and the inversely tapered silicon waveguide are vertically-aligned with each other.

Edge coupling device fabrication

An apparatus comprises a substrate comprising a silicon dioxide (SiO) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.

Inverse taper waveguides for low-loss mode converters

An apparatus comprises a substrate comprising a silicon dioxide (SiO2) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide (SiO2) layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.

A method of fabricating an edge coupling device and an edge coupling device are provided. The method includes removing a portion of cladding material to form a trench over an inversely tapered silicon waveguide, depositing a material having a refractive index greater than silicon dioxide over remaining portions of the cladding material and in the trench, and removing a portion of the material within the trench to form a ridge waveguide.

An apparatus comprising a waveguide along a longitudinal axis at a first elevation, an optical splitter coupled to a first edge of the waveguide along the longitudinal axis, two or more inverse tapers coupled to a second edge of the optical splitter along the longitudinal axis, and one or more offset inverse tapers that are substantially parallel with the two or more inverse tapers, wherein the one or more offset inverse tapers are along the longitudinal axis at a second elevation.

Mode size adjusting for edge coupling devices using multiple inverse tapers

An apparatus comprising a thick waveguide comprising a first adiabatic tapering from a first location to a second location, wherein the first adiabatic tapering is wider at the first location than at the second location, and a thin slab waveguide comprising a second adiabatic tapering from the first location to the second location, wherein the second adiabatic tapering is wider at the second location than at the first location, and a third adiabatic tapering from the second location to a third location, wherein the third adiabatic tapering is wider at the second location than at the third location, wherein at least a portion of the first adiabatic tapering is adjacent to the second adiabatic tapering, and wherein the first adiabatic tapering and the second adiabatic tapering are separated from each other by a constant gap.

Growing community of inventors

San Jose, CA, United States of America

Huapu Pan