Semiconductor Manufacturing International (Beijing) Corporation

Huanxin Liu

Yonggen He

Huojin Tu

Jialei Liu

Qingsong Wei

Chaowei Li

A semiconductor device and manufacturing method therefor includes a &#x3a3;-shaped embedded source or drain regions. A U-shaped recess is formed in a Si substrate using dry etching and a SiGe layer is grown epitaxially on the bottom of the U-shaped recess. Using an orientation selective etchant having a higher etching rate with respect to Si than SiGe, wet etching is performed on the Si substrate sidewalls of the U-shaped recess, to form a &#x3a3;-shaped recess.

Semiconductor device and manufacturing method thereof

A method of fabricating a semiconductor device for improving the performance of '&#x3a3;' shaped embedded source/drain regions is disclosed. A 'U' shaped recess is formed in a Si substrate. The recess is treated with a surfactant, the amount of surfactant adsorbed on the recess sidewalls being greater than that on the recess bottom. An oxide is formed on the bottom. The presence of surfactant on the sidewalls, prevents oxide from forming thereon. The surfactant on the sidewalls is then removed and an orientation selective wet etching process is performed on the sidewalls. The oxide protects the Si at the bottom is from being etched.

Method of fabricating a semiconductor device

A method of fabricating semiconductor device includes forming a recess having a substantially rectangular section and forming an oxide layer on sidewalls and an oxide layer on a bottom of the recess by anisotropic oxidation, wherein the oxide layer on the sidewalls is thinner than the oxide layer on the bottom of recess. The method further includes completely removing the oxide layer on the sidewalls and partially removing the oxide layer on the bottom of the recess. The method also includes performing an orientation selective wet etching on the recess using a remaining oxide layer of the recess as a stop layer to shape the sidewalls into a &#x3a3; shaped section. The method includes removing the remaining oxide layer using an isotropic wet etching.

Growing community of inventors

Beijing, China

Huanxin Liu