Yangtze Memory Technologies Co., Ltd.

Huang Peng Zhang

Qi Wang

Xiang Fu

Zhiliang Xia

Zhi Chao Du

Xin Yun Huang

Hua Min Cao

Shu Bing Xu

Wen Wen Dong

A controller includes memory and a microcontroller coupled to the memory. The memory is configured to store a list of entries of data in Flash memory coupled to the controller. The microcontroller is configured to periodically update the list of entries based on data programmed into the Flash memory, and check the list of entries upon reading data from the Flash memory.

Electronic apparatus and method of managing read levels of flash memory

An electronic apparatus including flash memory and a flash controller is provided. The flash controller is coupled to the flash memory and used to manage data access to the flash memory. The flash controller includes a timer, memory and a microcontroller coupled to the timer and the memory. The timer is used to generate clock interrupts. The memory is used to retain for a predetermined period of time a list of entries of data programmed into the flash memory. Upon each clock interrupt, the microcontroller is used to write an entry of data being programmed into the flash memory to update the list of entries.

Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a plurality vertical memory strings disposed through an alternating conductor/dielectric stack. Each of the memory strings includes a composite dielectric layers and a TFET semiconductor layer. The TFET semiconductor layer includes an n-type semiconductor layer and a p-type semiconductor layer.

Tunneling field effect transistor 3D NAND data cell structure and method for forming the same

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Wuhan, China

Huang Peng Zhang