Delta Electronics, Inc.

National Central University

Huang-Kun Chen

Shih-Peng Chen

Ching-Chuan Shiue

Horng-Jou Wang

Tai-Kang Shing

Hsieh-Shen Hsieh

Chao-Min Chen

Hsueh-Kuo Liao

Cheng-Chang Lee

Chao-Jui Liang

Chii-Chang Chen

Cheng-Yi Liu

Chuan-Chia Cheng

Chia-Hua Chan

Ching-Liang Lin

Heng-Chung Chang

Zong-Ting Yuan

Chao-Qing Wang

Chia-Yi Chu

Chuan-Wei Wang

Chih-Ming Sun

Wei-Leun Fang

Shiang-Cheng Lu

A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

Light-emitting diode apparatus and manufacturing method thereof

A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N&#x2014;GaN), a light emitting layer, and a second semiconductor layer (P&#x2014;GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.

Light emitting diode devices and manufacturing method thereof

An electroluminescent module includes a module substrate, a thermal-conducting carrier substrate and a light-emitting element. The module substrate has an opening, a first surface and a first patterned electrode disposed on the first surface. The thermal-conducting carrier substrate has a carrying element and a second patterned electrode disposed on the carrying element. The carrying element is disposed opposite to the first surface of the module substrate, and the second patterned electrode is disposed facing to the first patterned electrode and electrically connected to the first patterned electrode. The light-emitting element is located at the opening and disposed on the thermal-conducting carrier substrate. The light-emitting element has a first electrode and a second electrode, both of which are respectively electrically connected to the corresponding portions of the second patterned electrode of the thermal-conducting carrier substrate.

Electroluminescent module with thermal-conducting carrier substrate

A micro-electromechanical device includes a substrate, a first patterned conductive layer, a second patterned conductive layer and a first patterned blocking layer. The first patterned conductive layer is disposed on the substrate. The second patterned conductive layer is disposed on the first patterned conductive layer. The first patterned blocking layer is connected with the first patterned conductive layer and the second patterned conductive layer. In addition, a method of manufacturing the micro-electromechanical device is also disclosed.

Micro-electromechanical device and manufacturing method thereof

A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate.

Electroluminescent device

A capacitance sensing structure includes a substrate, a sensing electrode layer, at least one stack layer and a conductive body. The sensing electrode layer is formed on or in the substrate. The stack layer is formed on the sensing electrode layer. The conductive body is disposed over and corresponding to the sensing electrode layer and the stack layer.

Capacitance sensing structure

A manufacturing method of a light emitting diode (LED) apparatus includes the steps of: forming at least one temporary substrate, which is made by a curable material, on a LED device; and forming at least a thermal-conductive substrate on the LED device. The manufacturing method does not need the step of adhering the semiconductor structure onto another substrate by using an adhering layer, and can make the devices to be in sequence separated after removing the temporary substrate, thereby obtaining several LED apparatuses. As a result, the problem of current leakage due to the cutting procedure can be prevented so as to reduce the production cost and increase the production yield.

Manufacturing method of light emitting diode apparatus

A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.

Light-emitting diode device and manufacturing method thereof

Electroluminescent device and fabrication method thereof

A semiconductor piezoresistive sensor, which is electrically connected with a circuit, includes a semiconductor base, at least one piezoresistive element and a conductive layer. The semiconductor base includes a diaphragm and a base. The base is disposed adjacent to and around the diaphragm. The piezoresistive element is formed in the diaphragm and is electrically connected with the circuit. The conductive layer is electrically connected with the diaphragm.

Semiconductor piezoresistive sensor and operation method thereof

An accelerometer includes a fixing unit and a movable unit. The fixing unit has a plurality of first electrode parts and a plurality of second electrode parts. The movable unit is connected with the fixing unit and includes a body having an opening, a plurality of third electrode parts and a plurality of fourth electrode parts. The third electrode parts are disposed at an outer side of the body with respect to the first electrode parts, respectively. The fourth electrode parts are disposed at the inner side of the body in the opening, and are disposed respectively with respect to the second electrode parts, respectively.

Growing community of inventors

Taoyuan Hsien, Taiwan

Huang-Kun Chen