Honeywell G.m.b.h.

Huang-Joung Chen

Allan T Hurst, Jr

Tangshiun Yeh

William Frank Witcraft

Michael S Liu

Lonny L Berg

Jerry C Yue

In a magnetoresistive random access memory device, a spacer material is deposited at the edges of a memory bit to maintain magnetization at the edges in a direction along the edges.

Method of making integrated spacer for magnetoresistive RAM

A process for forming a magnetoresistive bit and an interconnection to an underlying component forms a pattern in an amorphous dielectric overlying the magnetic materials. Portions of the magnetic materials are removed to form a bit having a smooth bit edge profile by ion milling. The bit has a bit end located over the underlying component. A second amorphous dielectric layer is deposited and etched at the bit end to form a via at the underlying component. Conventional first metal is used to form the interconnection.

Highly producible magnetoresistive RAM process

A method for making a bipolar integrated circuit structure in a semiconductor substrate. A layer of insulating material having an implantation opening is formed on the upper surface of the semiconductor substrate. A polysilicon layer is formed in the implantation opening. A doping material is implanted into the polysilicon-filled opening. The doping material is diffused into the substrate material from the polysilicon-filled opening.

Growing community of inventors

Eagan, MN, United States of America

Huang-Joung Chen