Au Optronics Corporation

Huang-Chun Wu

Shine-Kai Tseng

A method of fabricating a TFT includes providing a substrate where a gate, an insulating layer, and a channel layer are formed. A conductive layer is formed on the substrate to cover the channel layer and the insulating layer. A photoresist layer is formed on the conductive layer. A photo mask is placed above the photoresist layer and has a data line pattern, a source pattern, and a drain pattern. A first width (W) between the source pattern and the drain pattern and a second width (W) of the data line pattern satisfy the following: if W&#x2212;1(um), then W+a(um), and 0.3&#x3c;a&#x3c;0.7. An exposing process is performed by using the photo mask, and a development process is performed to pattern the photoresist layer. The conductive layer is patterned by using the photoresist layer as an etching mask to form a source, a drain, and a data line.

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Hsinchu, Taiwan

Huang-Chun Wu