Taiwan Semiconductor Manufacturing Comp. Ltd.

Huang-Chin Chen

Chi On Chui

Yen-Ming Chen

Feng-Cheng Yang

Da-Yuan Lee

Kuo-Feng Yu

Shih-Hao Lin

Jian-Hao Chen

Hui-Chi Chen

Chia-Wei Chen

Cheng-Hao Hou

Shan-Mei Liao

Chih-Yu Hsu

Tsung-Da Lin

Cheng Hong Yang

A device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. The gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. The gate dielectric layer includes nitrogen element.

Integrated circuit device with improved reliability

Growing community of inventors

Hsinchu, Taiwan

Huang-Chin Chen