Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Huan-yu Shih

Hung-Wen Su

Chun-Chieh Lin

Ya-Lien Lee

Miin-Jang Chen

Chia-Pang Kuo

Cheng-Hui Weng

Yao-Min Liu

Cheng-Lun Tsai

Wen-Hsuan Chen

Wei-Hao Lee

A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

Diffusion barrier for semiconductor device and method

In a method of manufacturing a high-electron mobility transistor (HEMT), a first Group III-V semiconductor layer is formed on a substrate. The first Group III-V semiconductor layer is patterned to form a fin and a recessed surface. A second Group III-V semiconductor layer is formed to cover a top surface and all side surfaces of the fin and the recessed surface. The second Group III-V semiconductor layer is formed by a plasma-enhanced atomic layer deposition, in which a plasma treatment is performed on every time an as-deposited mono-layer is formed.

HEMTs with an AlxGa1-xN barrier layer grown by plasma enhanced atomic layer deposition

Growing community of inventors

Taipei, Taiwan

Huan-yu Shih