Ningbo Semiconductor International Corporation

Huan Sui

Fei Qi

Guohuang Yang

The present disclosure provides a film bulk acoustic resonator and its fabrication method, a filter, and a radio frequency communication system. The film bulk acoustic resonator includes a first substrate and a support layer disposed on the first substrate, where a cavity is formed in the support layer; a piezoelectric stacked layer covering the cavity, where the piezoelectric stacked layer includes an active resonance region and an inactive resonance region surrounding the active resonance region; and at least two trenches, arranged at a junction of the active resonance region and the inactive resonance region to define a range of the active resonance region. The at least two trenches include a first trench and a second trench; the second trench passes through the second electrode layer and the piezoelectric layer; and the first trench passes the first electrode and the piezoelectric layer and is connected to the cavity.

Film bulk acoustic resonator and fabrication method thereof, filter, and radio frequency communication system

The present disclosure provides a film bulk acoustic resonator and its fabrication method. The film bulk acoustic resonator includes a first substrate, a support layer bonded on the first substrate, a first cavity formed in the support layer, a piezoelectric stacked layer on the support layer, a first trench and a second trench which are formed in the piezoelectric stacked layer, a dielectric layer over the piezoelectric stacked layer, a second cavity formed in the dielectric layer, and a second substrate covering the second cavity, where the first trench is connected to the first cavity, and the second trench is connected to the second cavity.

Film bulk acoustic resonator and fabrication method thereof

The present disclosure provides a film bulk acoustic resonator and its fabrication method. The film bulk acoustic resonator includes a first substrate, a first support layer containing a first cavity, a piezoelectric stacked layer, and a first separation structure and/or a second separation structure. The piezoelectric stacked layer includes an effective working region and a parasitic working region; and in the parasitic working region, a first electrode and a second electrode have a corresponding region along a thickness direction. The first separation structure separates the first electrode, and the first electrode of a portion of the parasitic working region is insulated from the first electrode of the effective working region; and the second separation structure separates the second electrode, and the second electrode of a portion of the parasitic working region is insulated from the second electrode of the effective working region.

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Ningbo, China

Huan Sui