Xiamen Sanan Optoelectronics Technology Co., Ltd.

Huan-shao Kuo

Duxiang Wang

Chun-Yi Wu

Chaoyu Wu

Ching-Shan Tao

A light emitting diode includes a segmented quantum well formed via selective growth method to avoid re-absorption effect of photons in the LED internal quantum well. This improves external extraction efficiency and increases luminance. The light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer, wherein, the upper surface of the first semiconductor layer has a first growth region and a second growth region; the active layer is formed only in the first growth region via selective epitaxial growth; and the second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer via epitaxial growth.

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Xiamen, China

Huan-shao Kuo