Pixart Imaging Incorporated

Pixart Imaging Incorporation

Huan-Kun Pan

Han-Chi Liu

En-Feng Hsu

Sen-Huang Huang

Ching-Wei Chen

Yi-Chang Chang

Eiichi Okamoto

A pixel array of an image sensor includes multiple red, green, blue and panchromatic pixels. The red, green and blue pixels are formed on a substrate during a first process. Planarization material is deposited to form the panchromatic pixels on the substrate and to form a planarization layer on the red, green and blue pixels during the same second process subsequent to the first process. The planarization material of the panchromatic pixels and the planarization layer is characterized in high transmittance and high aspect ratio.

Pixel array of image sensor and method of fabricating the same

There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.

Front side illuminated semiconductor structure with improved light absorption efficiency

The present invention provides an ultra-violet light sensing device. The ultra-violet light sensing device includes a first conductivity type substrate, a second conductivity type region, and a first conductivity type high density region. The first conductivity type substrate includes a light incident surface. The second conductivity type region is disposed in the first conductivity type substrate and adjacent to the light incident surface. The first conductivity type high density region is disposed under the second conductivity type region. The present invention also provides another ultra-violet light sensing device, which further includes a first conductivity type high density shallow region which is sandwiched between the light incident surface and the second conductivity type region. Manufacturing methods for these ultra-violet light sensing devices are also disclosed in the present invention.

Ultra-violet light sensing device and manufacturing method thereof

Growing community of inventors

Hsin-Chu, Taiwan

Huan-Kun Pan