Taiwan Semiconductor Manufacturing Comp. Ltd.

Huan-Kuan Su

Yu-Hong Pan

Ling-Sung Wang

Jen-Pan Wang

Tsung-Han Wu

Wen Han Hung

Tong-Min Weng

Wei-Chun Liao

Guo-Zhou Huang

A semiconductor device and method of manufacturing that includes a first etch stop layer and a second etch stop layer to prevent delamination and damage to underlying components. A first passivation layer and a second passivation layer are disposed on a substrate, with a metal pad exposed through the passivation layers and contacting a top metal component of the substrate. The first etch stop layer is then formed on the second passivation layer and the metal pad. A third passivation layer is then formed on the substrate with an opening to the metal pad, which is covered by the first etch stop layer. The second etch stop layer is then formed on the third passivation layer and in the opening on the second etch stop layer. A bottom metal film/conductive component is then formed on the second etch stop layer, photoresist is applied, and wet etching is performed. The metal pad is protected from damage caused by delamination of the second etch stop layer by the first etch stop layer.

Semiconductor device and method of manufacture

A method for forming a semiconductor device and the resulting device are provided. At least one capacitor in a first gate structure is formed over a substrate. The at least one capacitor includes a first gate electrode including a first conductive layer, a semiconductor layer including a semiconductor material and a dopant, a dielectric layer disposed between the first gate electrode and the semiconductor layer, and a second conductive layer contacting the semiconductor layer. The at least one resistor includes a third conductive layer and is electrically connected to the at least one capacitor.

Device including resistor-capacitor (RC) structure and method of making the same

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Hsin-Chu, Taiwan

Huan-Kuan Su