Taiwan Semiconductor Manufacturing Comp. Ltd.

Huan-En Lin

Kuo-Cheng Lee

Chun-Hao Chou

Chi-Cherng Jeng

Volume Chien

Fu-Tsun Tsai

Shiu-Ko JangJian

Yung-Lung Hsu

Chia-Yu Wei

Ming-Hsien Yang

Chun-Liang Lu

Yu-Heng Cheng

Cheng-Hao Chiu

The present disclosure provides a high-dynamic range (HDR) pixel circuit, which includes a pixel subcircuit and a light-responsive switch circuit. The pixel subcircuit includes a photodetector, a capacitor, and a source-follower transistor. The source-follower transistor is enabled using a power supply voltage provided by the light-responsive switch circuitin response to the HDR pixel circuit being in a low light illuminance. The source-follower transistor is enabled using a first voltage generated by the photodetector in response to the HDR pixel circuit being in a high light illuminance. A first voltage detected by the photodetector and a second voltage associated with electric charges stored in the capacitor are outputted to form a HDR pixel value.

High dynamic-range (HDR) pixel circuit, color-image sensor package structure, and method for operating HDR pixel circuit

A semiconductor image sensor includes a pixel. The pixel includes a first substrate; and a photodiode in the first substrate. The semiconductor image sensor further includes an interconnect structure electrically connected to the pixel. The semiconductor image sensor further includes a reflection structure between the interconnect and the photodiode, wherein the reflection structure is configured to reflect light passing through the photodiode back toward the photodiode.

Semiconductor image sensor having reflection component and method of making

A backside illuminated (BSI) image sensor device includes: a first substrate including a front side and a back side; a second substrate bonded with the first substrate on the front side; and a blocking layer between the first substrate and the second substrate. The first substrate includes an image sensor, and the image sensor is configured to collect incident light entering from the back side. The second substrate includes a circuit coupled with the image sensor. The blocking layer is configured to block radiation induced by the circuit.

Backside illuminated image sensor and method of manufacturing the same

An integrated circuit structure includes a semiconductor substrate, an image sensor extending from a front surface of the semiconductor substrate into the semiconductor substrate, and an isolation structure extending from a back surface of the semiconductor substrate into the semiconductor substrate, wherein the isolation structure includes an air-gap therein. An air-gap sealing layer is on a backside of the semiconductor substrate. The air-gap sealing layer seals the air-gap, wherein the air-gap sealing layer includes a portion exposed to the air-gap.

Deep trench isolation with air-gap in backside illumination image sensor chips

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Kaohsiung, Taiwan

Huan-En Lin