Taiwan Semiconductor Manufacturing Comp. Ltd.

Huan Chi Tseng

Tang-Hsuan Chung

Szu-Chia Huang

Jhih Jie Shao

Chin-Chou Liu

Chien-Chang Lee

Chung-Min Fu

Wan-Yu Lo

Chung-Hsing Wang

Jerry Chang-Jui Kao

Ying-Chen Chao

King-Ho Tam

Chien-Ju Chao

Yuan-Yao Chang

Jhih-Jie Shao

Yu-Lan Hsiao

Tseng-Chin Lo

Kuo-Chuan Chang

The present disclosure provides methods for testing and evaluating electrical parameters of electronic circuits. An exemplary method includes providing a device-under-test electrically coupled to a testing apparatus; and determining an optimum value of a first electrical parameter and an optimum value of a second parameter by testing the device-under-test according to a set of first electrical parameter values and a set of second electrical parameter values. The optimum value of the first electrical parameter and the optimum value of the second parameter are determined based on an electrical noise response of the device-under-test.

Method and apparatus for testing a semiconductor device

One or more probe cards, wafer testers, and techniques for testing a semiconductor arrangement are provided. Testline arrangements are formed within scribe lines of a semiconductor wafer, in multiple directions, such as an x-direction and a y-direction. A wafer tester is configured to concurrently test the semiconductor arrangement in multiple directions using a multidirectional probe arrangement of a probe card. In some embodiments, a first pin arrangement of the multidirectional probe arrangement is mated with a first testline arrangement in a first direction, and a second pin arrangement of the multidirectional probe arrangement is mated with a second testline arrangement in a second direction. The wafer tester concurrently tests the semiconductor arrangement in multiple directions, such as in the first direction and the second direction, through the pin arrangements mated with the testline arrangements.

Multidirectional semiconductor arrangement testing

A method of making a semiconductor device includes determining, by a processor, a first pattern density of a first region, determining a second pattern density of a second region, determining a pattern density gradient from the first region to the second region, determining whether the pattern density gradient exceeds a pattern density gradient threshold and performing a placement or a routing of the semiconductor device if the pattern density gradient is less than or equal to the pattern density gradient threshold.

Method of making semiconductor device and system for performing the same

The present disclosure provides a method for testing a semiconductor device. The method includes providing a test unit and an electronic circuit that is electrically coupled to the test unit. The method includes performing a multi-dimensional sweeping process. The multi-dimensional sweeping process includes sweeping a plurality of different electrical parameters across their respective ranges. The method includes monitoring a performance of the electronic circuit during the multi-dimensional sweeping process. The monitoring includes identifying optimum values of the different electrical parameters that yield a satisfactory performance of the electronic circuit. The method includes testing the test unit using the optimum values of the different electrical parameters.

Provided is an apparatus for testing a semiconductor device. The apparatus includes a plurality of testing pads. The apparatus includes a plurality of testing units. The apparatus includes a switching circuit coupled between the testing pads and the testing units. The switching circuit contains a plurality of switching devices. The apparatus includes a control circuit coupled to the switching circuit. The control circuit is operable to establish electrical coupling between a selected testing unit and one or more of the testing pads by selectively activating a subset of the switching devices.

The present disclosure provides a method for testing a semiconductor device. The method includes providing a testing unit and an electronic circuit coupled to the testing unit and applying a first electrical signal to the testing unit. The method includes sweeping a second electrical signal across a range of values, the second electrical signal supplying power to the electronic circuit, wherein the sweeping is performed while a value of the first electrical signal remains the same. The method includes measuring a third electrical signal during the sweeping, the measured third electrical signal having a range of values that each correspond to one of the values of the second electrical signal. The method includes adopting an optimum value of the second electrical signal that yields a minimum value of the third electrical signal. The method includes testing the testing unit while the second electrical signal is set to the optimum value.

A method of making a semiconductor device includes arranging a first cell and a second cell, determining, by a processor, a first pattern density of a first cell, determining a second pattern density of a second cell, determining a pattern density gradient from the first pattern density to the second pattern density, determining whether the pattern density gradient exceeds a pattern density gradient threshold, and indicating a design change if the pattern density gradient exceeds than the pattern density gradient threshold.

Method of making semiconductor device and a control system for performing the same

A tool includes one or more machine readable storage mediums encoded with data. The data include a list of standard cells included in an integrated circuit (IC) design The data include a nominal leakage value approximating a respective median leakage value for each of the plurality of standard cells at a predetermined temperature and voltage. The data include at least one table including adjustment factors for calculating leakage based on voltage, temperature and process variations. The table includes a respective statistical scaling factor, for computing a mean leakage corresponding to a given median leakage. A processor is programmed to calculate and output a total IC leakage for the IC design at an input voltage and input temperature, based on the list, the nominal leakage values, the input voltage, the input temperature and at least one of the adjustment factors.

Computer implemented system and method for leakage calculation

A chemical-mechanical polishing process is described that provides high etch rates while at the same time minimizing the consumption of abrasives. This is achieved by embedding and dispersing the abrasive within the body of the material that is to be subjected to chemical-mechanical polishing.

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Hsinchu, Taiwan

Huan Chi Tseng