Yangtze Memory Technologies Co., Ltd.

Huamin Cao

Yu Wang

Ke Jiang

Huangpeng Zhang

Shiyang Yang

Zilong Chen

Ting Li

Bin Xiang

Xu Hou

Aspects of the disclosure provide a semiconductor memory device. The semiconductor memory device includes a memory cell array and peripheral circuitry coupled with the memory cell array. The memory cell array includes a plurality of memory cells. The peripheral circuitry includes programmable logic circuit that is configured, after the semiconductor memory device is powered on, to perform logic functions.

Flash memory device with programmable logic circuit

A semiconductor memory device includes a memory cell array and peripheral circuitry. The memory cell array includes a block of memory cells The peripheral circuitry can perform first program-verify loops in response to a first write operation to a first word line in a word line group to program memory cells associated with the first word line to multiple states. The word line group includes one or more word lines. Then, the peripheral circuitry determines verification start loops of the multiple states based on sensing results in the first program-verify loops, and performs second program-verify loops with the determined verification start loops of the multiple states in response to a second write operation to a second word line in the word line group.

Semiconductor memory device

Growing community of inventors

Wuhan, China

Huamin Cao