Xerox Corporation

Samsung Electronics Co., Ltd.

Hualong Pan

Yiliang Wu

Ping Liu

Yuning Li

Beng S Ong

Paul Farrell Smith

Hadi K Mahabadi

A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.

Thin-film transistors

An electronic device, such as a thin film transistor containing a semiconductor of the Formula: wherein R, R' and R&#x2033; are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents the number of repeating units.

Electronic devices

A method of forming conductive features on a substrate, the method comprising: providing two or more solutions, wherein a metal nanoparticle solution contains metal nanoparticles with a stabilizer and a destabilizer solution contains a destabilizer that destabilizes the stabilizer, liquid depositing the metal nanoparticle solution and the destabilizer solution onto the substrate, wherein during deposition or following the deposition of the metal nanoparticle solution onto the substrate, the metal nanoparticle and the destabilizer are combined with each other, destabilizing the stabilizer from the surface of the metal nanoparticles with the destabilizer and removing the stabilizer and destabilizer from the substrate by heating the substrate to a temperature below about 180&#xb0; C. or by washing with the solvent.

Methods for removing a stabilizer from a metal nanoparticle using a destabilizer

Organic thin film transistors with improved mobility are disclosed. The semiconducting layer comprises a semiconductor material of Formula (I): wherein Rand Rare independently selected from alkyl, substituted alkyl, aryl, and substituted aryl; and Rand Rare independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl. A silanized interfacial layer is also present which has alkyl sidechains extending from its surface towards the semiconducting layer.

Organic thin film transistor

An electronic device, such as a thin film transistor containing a semiconductor of Formula/Structure wherein R, R' and R&#x2033; are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents the number of repeating units.

An electronic device fabrication method including: (a) providing a dielectric region and a lower electrically conductive region, wherein the dielectric region includes a plurality of pinholes each with an entry and an exit; and (b) depositing an etchant for the lower electrically conductive region into the pinholes that undercuts the pinholes to create for a number of the pinholes an overhanging surface of the dielectric region around the exit facing an undercut area of the lower electrically conductive region wider than the exit.

Device and process involving pinhole undercut area

A polymer of the formula/structure wherein R, R', and R&#x2033; are, for example, a suitable hydrocarbon, a halogen (halide) a hetero-containing group, or mixtures thereof; and n represents the number of repeating groups.

Poly(dithienylbenzo[1,2-b:4,5-b']dithiophene) polymers

An electronic device, such as a thin film transistor, containing a semiconductor of Formula/Structure (I) wherein each R' is independently at least one of hydrogen, and a suitable hydrocarbon; Ar is an aryl, inclusive of heteroaryl substituents; and M represents at least one thiophene based conjugated segment.

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Ottawa, Canada

Hualong Pan