Huazhong University of Science and Technology

Hubei Grand Life Science and Technology Co., Ltd

Huajun Sun

Xiangshui Miao

Yi Bu Li

Chen Guo

Zhiqiang Qian

Ruyong Jiang

Lei Xu

Yingpeng Zhong

Hongbo Peng

Xiaomin Cheng

Li Li

Yaxiong Zhou

Min Tan

Xingxing Wang

Jiale Tang

Zuopai Zhou

Shangjin Yang

Xiaohua Xu

Xiaojing Yan

A method and a system of designing a memristor-based naive Bayes classifier and a classifier belonging to the field of information technology are provided. The method includes: constructing a naive Bayes classifier including a memristor array of M rows by 2N columns, where M is the number of classification types, and N is the number of pixels in a picture; calculating the number hof the pixel value of 0 and the number hof the pixel value of 1 in an ipixel in the jtraining sample, where j=1, 2, . . . , and M; and applying hpulses to a memristor Rin a jrow and a 2-1column to modulate the conductance of the memristor Rand applying hpulses to a memristor Rin the jrow and a 2column to modulate the conductance of the memristor R.

Method and system of designing memristor-based naive Bayes classifier and classifier

The present disclosure provides a system for efficiently preparing taurine, including: a solution storage unit configured to store a solution containing alkali metal taurinate, the solution being prepared by an ethylene oxide process; an ion exchange unit including at least one ion exchange resin column each configured to be activated by a first activation manner or a second activation manner independently, the first activation manner using sulfurous acid for activation to obtain alkali metal bisulfate and taurine, and the second activation manner using sulfuric acid for activation to obtain alkali metal sulfate and taurine; and a dispensing unit connected to the solution storage unit and the ion exchange unit respectively, and configured to adjust an amount of a solution conveyed from the solution storage unit to each of the at least one ion exchange resin column in the ion exchange unit.

System and method for efficiently preparing taurine

Provided is a catalyst for preparing high-purity taurine, and the catalyst is N,N-disubstituted aminoethanesulfonic acid and has a structure represented by Formula I, in which Rand Rare each independently selected from alkyl, alkenyl, alkynyl, alkoxy, benzyl, sulfhydryl, thioether group, aryl, heteroaryl, amino, amide, imide, cyano, aldehyde group, carbonyl, carboxyl, sulfonic acid group, or ester group. Also provided is a method for preparing high-purity taurine, which adds the catalyst in an ammonolysis step for preparing taurine, thereby having effects of high yield, inhibition of impurity production and a reduced amount of ammonia used, etc. The catalyst has advantages of low cost, stable physical properties, and easy separation from the product. The preparation method is simple to operate with easily available raw materials and high yield, and can be employed for industrial production. Moreover, the purity of the prepared taurine can be up to 98% or higher. 

Catalyst for preparing high purity taurine and use thereof

Provided is a method for producing taurine including: providing a reaction solution comprising alkali metal taurinate and/or alkali metal isethionate, passing at least a portion of the reaction solution through a column of basic anion exchange resin, adsorbing anions of alkali metal taurinate and/or alkali metal isethionate to the basic anion exchange resin, and collecting an eluate comprising at least one impurity, desorbing anions of alkali metal taurinate and/or alkali metal isethionate from the basic anion exchange resin with an alkaline solution, and collecting a desorption liquid comprising alkali metal taurinate and/or alkali metal isethionate, subjecting the desorption liquid comprising alkali metal taurinate to acidification or subjecting the desorption liquid comprising alkali metal isethionate to aminolysis and acidification, thereby obtaining taurine.

Method for producing taurine and method for removing impurity from reaction system for producing taurine

A non-volatile Boolean logic operation circuit, including: two input ends; an output end; a first resistive switching element M, the first resistive switching element M including a positive electrode and a negative electrode; and a second resistive switching element M, the second resistive switching element Mincluding a positive electrode and a negative electrode. The negative electrode of the first resistive switching element Moperates as a first input end of the logic operation circuit. The negative electrode of the second resistive switching element Moperates as a second input end of the logic operation circuit. The positive electrode of the second resistive switching element Mis connected to the positive electrode of the first resistive switching element M, and a connected end thereof operates as the output end of the logic operation circuit.

Non-volatile boolean logic operation circuit and operation method thereof

A joint short-time and long-time storage device, including a first electrode layer, a functional material layer connected to the first electrode layer, and a second electrode layer connected to the functional material layer. The first electrode layer is made of inert conductive metal, the second electrode layer is made of active conductive metal, and the functional material layer is made of chalcogenide.

Joint short-time and long-time storage device and storage method thereof

A nonvolatile logic gate circuit based on phase change memories, including a first phase change memory, a second phase change memory, a first controllable switch element and a first resistor, wherein a first end of the first phase change memory serves as a first input end of an AND gate circuit, a first end of the second phase change memory serves as a second input end of the AND gate circuit, a first end of the first controllable switch element is connected to a second end of the first phase change memory, a second end of the first controllable switch element is grounded; one end of the first resistor is connected to the first end of the second phase change memory, the other end of the first resistor is grounded; and the first end of the second phase change memory serves as an output end of the AND gate circuit.

Nonvolatile logic gate circuit based on phase change memory

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Hubei, China

Huajun Sun