Globalfoundries Singapore Pte. Ltd.

Applied Materials, Inc.

Agency for Science, Technology and Research

Huajun Liu

Vibhu Jindal

Wen Xiao

Soh Yun Siah

Yu Jau Chen

Siow Lee Chwa

Yoke Leng Lim

Yanxia Shao

Herng Yau Yoong

Juan Boon Tan

Danny Pak-Chum Shum

Fan Zhang

Kui Yao

Lei Zhang

Laiqiang Luo

Dong Wang

Yew Tuck Clament Chow

Weng Heng Liew

Various embodiments may provide an electromechanical responsive film. The electromechanical responsive film may include a composition including sodium (Na), potassium (K), niobium (Nb) and oxygen (O). The composition may have a formula (NaK)NbO, wherein 0≤x<1, wherein 0≤y<1, and wherein 0<x+y<1. The composition may satisfy at least one condition selected from a group consisting of a first condition of (x+y+4)/2≤(3−δ)≤(x+y+5)/2 and a second condition of 0<δ<1.

Electromechanical responsive film, stacked arrangement and methods of forming the same

A non-contact non-destructive testing method includes spatially and/or temporally controlling a laser excitation light based on a predetermined pattern. The laser excitation light is projected onto a surface of a test object to generate acoustic waves on the test object. The acoustic waves apply stress loading to the test object. The method also includes imaging the test object with and without stress loading using shearography imaging, and analyzing shearography imaging data to determine a presence of a defect in the test object.

Shearography testing method and system using shaped excitation light having at least one curved line

Apparatus, methods and are disclosed for measuring refractive index of an absorber material used in EUV phase shift masks. The method and apparatus utilize a reference measurement and as series of reflectance measurements at a range of EUV wavelengths and thickness values for the absorber material to determine the refractive index of the absorber material.

System and method of measuring refractive index of EUV mask absorber

Apparatus, methods and are disclosed for measuring refractive index of a material film. The method and apparatus utilize a reference measurement and as series of reflectance measurements at a range of wavelengths and thickness values for the material film to determine the refractive index of the material film.

System and method to measure refractive index at specific wavelengths

Integrated circuits and methods of producing the same are provide. In an exemplary embodiment, a method includes determining a memory area of the integrated circuit, and forming a select layer overlying the substrate. A portion of the select layer is selectively etched to form a select gate within the memory area. A concentration of an indicator is measured in an etch off-gas during the selective etching of the select layer, and the selective etching of the select layer is terminated when the concentration of the indicator crosses an end point determination concentration.

Integrated circuits with non-volatile memory and methods of producing the same

Fabrication of a slim split gate cell and the resulting device are disclosed. Embodiments include forming a first gate on a substrate, the first gate having an upper surface and a hard-mask covering the upper surface, forming an interpoly isolation layer on side surfaces of the first gate and the hard-mask, forming a second gate on one side of the first gate, with an uppermost point of the second gate below the upper surface of the first gate, removing the hard-mask, forming spacers on exposed vertical surfaces, and forming a salicide on exposed surfaces of the first and second gates.

Method of forming split-gate cell for non-volative memory devices

Growing community of inventors

Singapore, Singapore

Huajun Liu