Industrial Technology Research Institute

Huai-Yuan Tseng

Yung-Hui Yeh

Ming-Hsien Lee

Chen-Pang Kung

Horng-Chih Lin

Chun-Yao Huang

Chen-Ming Chen

Yu-Wu Wang

Ching-Chieh Lin

Cheng-Chung Chen

Chun-Tao Lee

Bo-Chu Chen

Bou-Chi Chang

A method of fabricating a semiconductor device includes first providing an insulation substrate. A patterned conductive layer is formed over the insulation substrate, and the patterned conductive layer includes a channel region and a number of protruding regions. A gate structure layer is formed over the insulation substrate. The gate structure layer covers a part of the patterned conductive layer, and each of the protruding regions has an exposed region. A doping process is performed to dope at least the exposed region of the patterned conductive layer to form a number of S/D regions.

Method of fabricating semiconductor device

A driving circuit for a light emitting element, electrically connected to a data line and a scan line and powered by a bias voltage so as to drive the light emitting element, comprising: a first transistor, further comprising: a first gate, electrically connected to the scan line; and a first drain/source, having a first node electrically connected to the data line and a second node; and a second transistor, further comprising: a second gate, electrically connected to the second node of the first drain/source; and a second drain/source, having a first node electrically connected to the bias voltage, and a second node electrically connected to the light emitting element; wherein, an insulation layer and a layer of non-volatile material is formed successively between the semiconductor layer and the second gate of the second transistor.

Driving circuit of light emitting element

The present invention discloses an image display with photo sensor, electrically connected to a data line, a first scan line, a second scan line and a sensing line, and being powered by a first bias voltage and a second bias voltage, comprising a light emitting element, a first transistor, a second transistor, a third transistor, a photo sensor and a capacitor, which is featuring by arranging photo sensors in the proximity of light emitting elements so as to enable the image display with photo sensor to act as an output device for displaying images and also as an input device for detecting light.

Image display with photo sensor

A structure of semiconductor device including an insulation substrate is provided. A channel layer is disposed on the insulation substrate. A plurality of doped layers is disposed on the insulation substrate, and protrudes from the channel layer. The doped layers form at least two source/drain electrode (S/D electrode) pairs, and each of the S/D electrode pairs has a different extension direction with respect to the channel layer. A gate dielectric layer is disposed on the channel layer. A gate layer is disposed on the gate dielectric layer. Preferably, for example, the extension direction of at least one of the S/D electrode pairs is a first direction, and the extension direction of at least another one of the S/D electrode pairs is a second direction.

Structure of semiconductor device

A pixel array with flexible circuit layout is disclosed, which comprises: a substrate, having a first surface; a plurality of scan lines; and a plurality of data lines; wherein the plural scan lines are disposed on the first surface while each has a profile defined by a non-linear first function, and the plural data lines are disposed on the first surface while each has a profile defined by a non-linear second function. When the pixel array is adapted for a flexible display and the display is being bended, the flexible circuit layout of the pixel array of the invention can effectively reduce the risk of the snapping of the conductive wires used in the pixel array so that the flexibility and reliability of the flexible display are enhanced.

Pixel array with flexible circuit layout having respective scan and data line profiles with predetermined wave construction so as to evenly distribute any strain on the respective scan and data lines to withstand stress and be flexible

A method for forming a protective structure of active matrix triode field emission device is provided. The method comprises the steps of forming a silicon active region; depositing a gate oxide layer over the silicon active region; depositing and patterning a first metal layer over the gate oxide layer; doping impurities into portions of the said silicon active region to form a source/drain in a first conductive type and simultaneously to form a diode having a terminal in the first conductive type; forming ILD layer over the first metal layer and forming a plurality of contact holes thereon; depositing and patterning a second metal layer; forming a passivation layer over the second metal layer and forming a plurality of via holes thereon, depositing and patterning a third metal layer to form a gate and a tip structure.

Method of forming protective structure for active matrix triode field emission device

A thin film transistor structure for a field emission display is disclosed, which has a substrate; a patterned poly-silicon layer having a source area, a drain area, and a channel on the substrate; a patterned first gate metal layer; a first gate-insulating layer sandwiched in between the poly-silicon layer and the first gate metal layer; a patterned second gate metal layer; and a second gate-insulating layer sandwiched in between the poly-silicon layer and the second gate metal layer; wherein the thickness of the second insulating layer is greater than that of the first gate-insulating layer, and the absolute voltage in the channel under the first gate metal layer is less than that under the second gate metal layer when a voltage higher than the threshold voltage thereof is applied to both of the first gate metal layer and the second gate metal layer.

Growing community of inventors

Pingzhen, Taiwan

Huai-Yuan Tseng