Taiwan Semiconductor Manufacturing Comp. Ltd.

Huai-Jen Shu

Ming-Chun Chou

Chiarn-Lung Lee

Ying-Tzu Yen

A cathode-anode apparatus is constructed whereby the wafer under test, connected to a conducting wire, forms the cathode terminal and a copper plate, also connected to a conducting wire, forms the anode terminal. The wafer under test and the copper plate are immersed in a CuSO &mdash;H O solution. A positive dc voltage is applied to the copper plate; the dc current ionizes the CuSO solution and forms Cu ions. These Cu ions will diffuse to the wafer surface. Most of the Cu ions will accumulate in and around defective contacts or vias in the semiconductor surface making these defective contacts or vias readily identifiable.

Check abnormal contact and via holes by electroplating method

A cathode-anode apparatus is constructed whereby the wafer under test, connected to a conducting wire, forms the cathode terminal and a copper plate, also connected to a conducting wire, forms the anode terminal. The wafer under test and the copper plate are immersed in a CuSO,&mdash;H,O solution. A positive dc voltage is applied to the copper plate; the dc current ionizes the CuSO,solution and forms Cu,ions. These Cu,ions will diffuse to the wafer surface. Most of the Cu,ions will accumulate in and around defective contacts or vias in the semiconductor surface making these defective contacts or vias readily identifiable.

A method for removing a metal-fluoropolymer residue from an integrated circuit structure within an integrated circuit. There is first provided an integrated circuit having formed therein a metal-fluoropolymer residue. The metal-fluoropolymer residue is formed from a first plasma etch method employing a fluorocarbon containing etchant gas composition within the presence of a conductor metal layer within the integrated circuit. The metal-fluoropolymer residue is then exposed to a second plasma etch method employing a chlorine containing etchant gas composition to form from the metal-fluoropolymer residue a chlorine containing plasma treated metal-fluoropolymer residue. Finally, the chlorine containing plasma treated metal-fluoropolymer residue is removed from the integrated circuit through a stripping method sequentially employing an aqueous acid solution followed by an organic solvent.

Growing community of inventors

Hsin-Chu, Taiwan

Huai-Jen Shu