United Microelectronics Corp.

Huai-Hsuan Tsai

Yi-Tyng Wu

Shih-Hung Chen

Chih-Sheng Chang

Hsuan-Hsu Chen

Chi-Rong Lin

Chien-hua Tsai

Chih-Hung Cheng

Chun-Hsing Tung

Nien-Chung Chiang

A process for fabricating a micro-display is provided. First, a wafer having a driving circuit thereon is provided. Then, a metallic reflective layer is formed on the wafer. Thereafter, an anti-reflection layer and a patterned photoresist layer are sequentially formed on the metallic reflective layer. Using the patterned photoresist layer as an etching mask, the anti-reflection layer and the metallic reflective layer are etched to form a trench pattern that exposes the surface of the wafer. After that, the patterned photoresist layer is removed. A dielectric layer is formed to cover the anti-reflection layer and fill the trench pattern. Then, a portion of the dielectric layer and the anti-reflection layer are removed to expose the surface of the metallic reflective layer.

Process for fabricating micro-display

A process of physical vapor depositing mirror layer with improved reflectivity is disclosed. A wafer is loaded into a PVD tool comprising a degas chamber, a Ti/TiN sputter deposition chamber, a cooling chamber, and an aluminum sputter deposition chamber. A wafer degas process is first performed within the degas chamber. The wafer is then transferred to the Ti/TiN sputter deposition chamber and deposition sputtering a layer of titanium onto the wafer. The wafer is transferred to the cooling chamber and gas cooling the wafer temperature down to 40-50&#xb0; C. The wafer is then transferred to the aluminum sputter deposition chamber and deposition sputtering a layer of aluminum onto the wafer at 40-50&#xb0; C. with a backside gas turned off. The deposited layer of aluminum over the wafer has a reflectivity of about 0.925 at wavelength of around 380 nm.

Process of physical vapor depositing mirror layer with improved reflectivity

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Tainan, Taiwan

Huai-Hsuan Tsai