Santak Electronic (shenzhen) Co., Ltd.

Huafen Ouyang

Hualiang Li

Dongxin Jin

Dawei Zheng

Lei Cao

Zhimin Shen

Xuegang Liu

Tian Jing

The present invention provides a Miller clamping device for parallel switching transistors and a driver comprising the same. The Miller clamping device includes: a driver chip including an output terminal and a built-in Miller clamping circuit with a Miller clamping terminal, the output terminal of the driver chip being configured to output a pulse width modulation signal; and a plurality of auxiliary Miller clamping circuits, each of the auxiliary Miller clamping circuits being connected between a gate of a corresponding switching transistor and the Miller clamping terminal of the built-in Miller clamping circuit. When the built-in Miller clamping circuit is triggered for Miller clamping, a Miller current generated by the corresponding switching transistor flows to a first direct-current (DC) voltage through a corresponding auxiliary Miller clamping circuit. The Miller clamping device of the present invention can perform Miller clamping on the parallel switching transistors and reduce the circuit cost.

Miller clamping device for parallel switching transistors and driver comprising same

The present invention provides a driving circuit for a switching transistor and a driving device including the same. The driving circuit includes: a power amplifier, including a first power transistor and a second power transistor that are connected between a first direct current voltage terminal and a second direct current voltage terminal and are arranged in a push-pull circuit; a first voltage regulating device, connected between an input terminal of the power amplifier and a control terminal of the first power transistor; a third power transistor, connected between an output terminal of the power amplifier and the second direct current voltage terminal or a grounding terminal; a first voltage dividing device, connected between the input terminal and the output terminal of the power amplifier; and a transistor control circuit, configured to: control the third power transistor to be turned on when the switching transistor is located in a short-circuit path, and control the third power transistor to be turned off when the switching transistor is controlled to be turned on and is not located in the short-circuit path. The driving circuit of the present invention reduces the power consumption of the switching transistor and extends the time for short-circuit protection.

Driving circuit for a switching transistor and a driving device including the same

The present invention provides an apparatus to actively balance the thermal performance of paralleled power devices, comprising: a monitoring unit for monitoring the temperature of each power device of the paralleled power devices to judge whether the temperature is out of balance; and a balancing unit for adjusting power loss of the power devices with monitored higher temperatures so as to achieve the balance of the thermal performance of the paralleled power devices.

Apparatus and approach to actively balance thermal performance of paralleled devices

The present invention provides a Miller clamp drive circuit, including a drive chip which includes an output terminal configured to output a driving signal, a clamp terminal, a power terminal and a controllable switch connected between the clamp terminal and the power terminal; a drive resistor, one terminal of which is connected to the output terminal of the drive chip and the other terminal of which is used to connect to a control electrode of a power switching transistor; and a Miller clamp circuit including a first voltage divider circuit which is connected between the other terminal of the drive resistor and the clamp terminal and configured to have a preset voltage drop, and a second voltage divider circuit connected between the clamp terminal and the power terminal. The Miller clamp drive circuit of the present invention increases the Miller clamp voltage and decreases the tailing time of the power switching transistor.

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Shenzhen, China

Huafen Ouyang