Wuhan China Star Optoelectronics Technology Co., Ltd.

Huazhong University of Science and Technology

Jingmen Gem Co., Ltd

Hua Zhang

Chao Wang

Kaihua Xu

Xindong Mei

Tao Li

Zhenkang Jiang

Xiuping Du

Liang Bai

Zhijiang Wu

Shifeng Jiang

Hong Ma

Hong Yang

Zhou Tang

A method for parameter extraction of a sensitive probe and degree-of-freedom coupling calculation of a capacitive displacement sensor is provided. Through applying multiple groups of charge excitations to the mechanically sensitive probe with a multi-conductor structure, the electrostatic field distribution inside the sensitive probe under each group of excitation charges is obtained by numerical calculation to compute the electrostatic field energy, thereby finally extracting the complete distributed capacitance matrix of the sensitive probe. For the couplings among the multi-degree-of-freedom displacements caused by the sensitive probe, through establishing an indefinite admittance matrix of the sensitive probe and connecting the subsequent multi-channel sensing circuits, a complete equivalent circuit model for multi-degree-of-freedom coupling analysis is obtained to quantitatively calculated the degree-of-freedom coupling caused by displacement of the test mass.

Method for parameter extraction of sensitive probe and degree-of-freedom coupling calculation of capacitive displacement sensor

A preparation method for a high nickel ternary precursor capable of preferential growth of crystal planes by adjusting and controlling the addition amount of seed crystals. The method comprises the following steps: 1) feeding a ternary metal solution into a reaction kettle containing a first base liquid for reaction, and when the particle size reaches 1.5 to 3.0 μm, stopping the feeding, so as to obtain a seed crystal slurry; 2) simultaneously adding the ternary metal solution, a liquid alkali solution, and an ammonia solution in cocurrent flow into a growth kettle containing a second base solution for reaction, when the particle size reaches 6 to 8 μm, adding the seed crystal slurry into the reaction system, and controlling the particle size to be 9.0 to 11.0 μm by adjusting the feed rate of the seed crystal, so as to obtain the target object. In the preparation method, by adding seed crystals continuously, the crystal plane parameters of 001 peak in the prepared ternary precursor material is lower than the crystal plane parameters of 101 peak, facilitating the embedding of Li ions, and effectively improving the performance of a battery prepared by using the material.

Preparation method for high nickel ternary precursor capable of preferential growth of crystal planes by adjusting and controlling addition amount of seed crystals

The present application discloses an array substrate and a display panel. The array substrate includes a substrate, a light-shielding layer, a touch trace, and a data line. The light-shielding layer is disposed on the substrate. The touch trace is disposed on the substrate. The data line and the touch trace are disposed on different layers, and at least one of the data line and the touch trace is disposed on a same layer as the light-shielding layer. An orthographic projection of the data line on the substrate at least partially covers an orthographic projection of the touch trace on the substrate. The orthographic projection of the data line on the substrate and the orthographic projection of the touch trace on the substrate are staggered.

Array substrate and display panel

Growing community of inventors

Hubei, China

Hua Zhang