The South China University of Technology

Guang Zhou New Vision Opto-Electronic Technology Co., Ltd.

Launch-Pharma Technologies, Ltd.

Hua Xu

Lei Wang

Junbiao Peng

Miao Xu

Min Li

Hong Tao

Hongmeng Li

Jianhua Zou

Weijing Wu

Weifeng Chen

Lei Zhou

Jian Hua Zou

Zikai Chen

Fang Wang

Yehua Jin

Fayang Qiu

Wencong Liu

Provided are a display panel and a display device. The display panel includes at least two display units. Each display unit includes a substrate, a flexible substrate, a light-emitting unit circuit layer and at least one driver chip. The rigid substrate includes a display bearing region and a splicing region located on at least one side of the display bearing region. The flexible substrate is located on a first surface of the rigid substrate and located in the display bearing region, and the flexible substrate at least partially extends out of the display bearing region of the rigid substrate. The light-emitting unit circuit layer is located on a surface of one side of the flexible substrate away from the rigid substrate and includes at least one bonding pad.

Display panel and display device

The present application discloses a composite metal oxide semiconductor which is a metal oxide semiconductor doped with a rare earth oxide. Even doping the praseodymium oxide or ytterbium oxide at a small doping amount, oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also disclose the thin-film transistors made thereof the composite metal oxide semiconductor and its application.

Composite metal oxide semiconductor and thin-film transistor made therefrom and its application

Provided are a method for preparing an organic electroluminescent device, an organic electroluminescent device and a display apparatus. The method for preparing the organic electroluminescent device includes: providing a substrate; forming, on the substrate, a red light reflective electrode located in a red sub-pixel preparation region, a green light reflective electrode located in a green sub-pixel preparation region, and a blue light reflective electrode located in a blue sub-pixel preparation region; forming a transparent insulating layer on a surface of a side of the red light reflective electrode facing away from the substrate, where the area of the transparent insulating layer is smaller than the area of the red light reflective electrode; and forming a transparent conductive layer on a surface of a side of the transparent insulating layer facing away from the substrate, a surface of the side of the red light reflective electrode facing away from the substrate and not covered by the transparent insulating layer, and a surface of a side of the green light reflective electrode facing away from the substrate.

Method for preparing organic electroluminescent device, and organic electroluminescent device and display apparatus

The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.

Doped metal oxide semiconductor and thin-film transistor made therefrom and its application

The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.

Oxide semiconductor thin-film and thin-film transistor consisted thereof

Disclosed are to a pixel circuit, a method for driving the pixel circuit and a display panel. The pixel circuit includes a data write module, a storage module, a drive module and a light emitting device. The drive module includes a first control terminal and a second control terminal. The data write module is configured to write, at a data write stage, a data signal into the first control terminal of the drive module, the storage module is configured to maintain a potential of the first control terminal, the second control terminal is electrically connected to a pulse-width modulation (PWM) signal input terminal of the pixel circuit, and is configured to control the drive module to provide discontinuous drive current according to a PWM signal from the PWM signal input terminal at a light emission stage, and the light emitting device emits light in response to the discontinuous drive current.

Pixel circuit, driving method for pixel circuit, and display panel

The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (InO)(MO)(RO)semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

Metal oxide (MO semiconductor and thin-film transistor and application thereof

The present invention discloses a metal oxide (MO) semiconductor, which is implemented by respectively doping at least an oxide of rare earth element R and an oxide of rare earth element R' into an indium-containing MO semiconductor to form an InMRR&#x2032;Osemiconductor. According to the present invention, the extremely high oxygen bond breaking energy in the oxide of rare earth element R is used to effectively control the carrier concentration in the semiconductor, and a charge transportation center can be formed by using the characteristic that the radius of rare earth ions is equivalent to the radius of indium ions, so that the electrical stability of the semiconductor is improved. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

Metal oxide (MO) semiconductor and thin-film transistor and application thereof

The disclosure relates to an entecavir intermediate, a synthetic method therefor, and the synthetic method for entecavir by using the intermediate. According to the disclosure, the synthetic methods for entecavir and the intermediate thereof have the advantages of being controllable in chirality, high in yield and product purity, wide in source of raw materials, cheap and available in reagents, simple in reactions, convenient to operate, environmentally friendly, and suitable for industrial amplification production.

Growing community of inventors

Guangzhou, China

Hua Xu